Formation of dysprosium silicide wires on Si(001)

Preinesberger, C.; Vandré, S.; Kalka, T.; Dähne‐Prietsch, M.

doi:10.1088/0022-3727/31/12/001

Cited by 148 publications

(109 citation statements)

References 6 publications

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“…© 2009 American Institute of Physics. ͓DOI: 10.1063/1.3085772͔ Self-assembled rare-earth silicide nanowires ͑NWs͒ have been intensively investigated in the past decade [1][2][3][4] due to their lower Schottky-barrier height 5 than refectory metal silicides. It is generally believed that the high length-width ratio of NWs is the result of the anisotropic lattice mismatch between ReSi 2 and Si.…”

Section: Crystallography Of Self-assembled Dysi 2 Nanowires On a Si Smentioning

confidence: 99%

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Qiu

Zhang

Kelly

2009

Applied Physics Letters

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A recently developed crystallographic model, edge-to-edge matching, has been used to interpret the crystallographic features of self-assembled DySi2 nanowires on Si substrates. All of the observed orientation relationships (ORs) and interface orientations of the DySi2 on Si(111), (001), and (110) were predicted by one criterion. The calculated results are fully consistent with the previous high-resolution transmission electron microscopy observations. The preference for each OR and interface was discussed in terms of the competition between thermodynamics and kinetic factors. This model can also be used in other epitaxy systems and has strong potential for future nanostructure design.

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Section: Crystallography Of Self-assembled Dysi 2 Nanowires On a Si Smentioning

confidence: 99%

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Qiu

Zhang

Kelly

2009

Applied Physics Letters

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“…the rare-earths can obtain a close lattice match with Si(001) in one direction while a large lattice mismatch exists in the orthogonal direction. 55 The resulting 1D structures have widths in the range of 3-10 nm, while their lengths can extend for hundreds of nanometers.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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“…Arguably, the most interesting cases are those in which deposited atoms self-organize into a novel nanophase material. Interesting examples include the formation of optically active quantum dots and quantum-dot superlattices in Si/Ge 1 and PbSe/PbTe heteroepitaxy, 2 metallic nanowires in silicide heteroepitaxy, 3,4 or the formation of atomically smooth metal films on semiconductor surfaces. 5,6 While the formation of wires and dots appears to be driven by a classical strain relaxation mechanism, the formation of atomically-smooth metal films is often driven by quantum-mechanical confinement.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface reconstruction on the formation and superconductive properties of metastable Pb-Ga alloy films

et al. 2011

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We show that the growth, composition, and superconductive properties of ultrathin Pb1−xGax alloy films depend strongly on the atomic structure of the substrate interface. Whereas alloy films on the Si(111)-(7 × 7) surface grow in multilayers, reminiscent of the quantum growth phenomenon observed in pure Pb layers, alloy films on the Si (111)• -Ga interfaces gradually switch to classical layer-by-layer growth. The (7 × 7) interface is unique in that it enables formation of atomically smooth alloy films containing up to 6% of Ga, which is far beyond the solid solubility limit. In contrast, the ( √ 3 × √ 3) interfaces promote phase separation. The contrasting influences of these interfaces are also reflected by their superconductive properties, most notably by the differences in the critical current density, exceeding more than one order of magnitude.

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Formation of dysprosium silicide wires on Si(001)

Cited by 148 publications

References 6 publications

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Influence of interface reconstruction on the formation and superconductive properties of metastable Pb-Ga alloy films

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