Since the fi rst report of a dye-sensitized solar cell (DSSC) by GrÀtzel, they have been seen as a promising solution for many impending energy and environmental problems, due to their inexpensive fabrication, eco-friendly characteristics, and reasonable effi ciency ( > 11%). [1][2][3][4] Furthermore, DSSCs with thin, light-weight substrates may allow for the creation of innovative mobile IT tools. [ 5 ] However, the effi ciency of DSSCs is low compared with crystalline Si (24.7%) or thin-fi lm CIGS (copper indium gallium selenide, 20.0%), which restricts their potential application. [ 4 ] There have been many attempts to improve the effi ciency of DSSCs. Researchers have mainly concentrated their attention on electrode materials, novel sensitizers, electrolyte additives, and nanostructures for enhanced light scattering. [6][7][8][9][10] However, relatively few reports have focused on the interface between the electrode material and the current-collecting substrates-in particular, DSSCs with metal substrates. Hayase et al. demonstrated improved effi ciency by mechanical treatment of the substrate. [ 11 ] However, this earlier study investigated a DSSC with a F/SnO 2 (FTO) glass substrate, and the increase in the effi ciency was small. We previously reported a DSSC that used a metal substrate, rather than the commonly used conductive-layer-coated plastic fi lms. In addition, we found that the interface between TiO 2 and metal substrates plays an important role. [12][13][14][15] In this communication, we report that acid (HNO 3 -HF) treatment of the Ti substrate for the photo-anode signifi cantly improved the effi ciency of DSSCs. Prior to spreading the TiO 2 paste on the substrates with a doctor blade, the Ti substrates were chemically treated with aqueous HNO 3 -HF. With the exception of cleaning, no additional pre-or post-treatment was performed. The proposed surface-treatment method simultaneously improved the electrical and optical behavior ( Scheme 1 ), resulting in a highly increased performance in terms of all fi gures of merit: open-circuit voltage, V oc , shortcircuit current density, J sc , fi ll factor, FF , and power conversion effi ciency.Figure 1 a and b show scanning electron microscopy (SEM) images of the Ti surface a) before and b) after HNO 3 -HF treatment. Before treatment, the Ti substrates showed uneven surfaces with no sharp angles. However, HNO 3 -HF treatment caused sharp steps to develop at the grain boundaries, due to different etching rates of dissimilar crystal structures between the grains and the grain boundaries. [ 16 ] Figure 1 c-e shows the cross-sectional scanning transmission electron microscopy (STEM) images of the Ti substrates. On the outermost surface, the non-treated Ti substrate exhibited a fi ner-grained structure, as denoted by the circled symbol 3. This suggests that the outermost surface of the Ti substrate was composed of fi ner-grained disordered Ti, which resulted from the thermomechanical manufacturing process. [ 17 ] However, treatment of the Ti substrate with the ...