Formation of epitaxial diamond-silicon carbide heterojunctions

Chalker, Paul R.; Johnston, Colin; Romani, S.; Ayres, C.F.; Buckley-Golder, I.M.; Krötz, G.; Angerer, H.; Müller, Gerhard; Vepřek, S.; Legner, W.; Smith, Lesley M.; Leese, A.B.; Jones, Anthony C.; Rushworth, S.

doi:10.1016/0925-9635(94)05217-4

Cited by 12 publications

(2 citation statements)

References 18 publications

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“…Thin films of silicon carbide and silicon-carbon alloys are of great scientific and technological interest since these materials present an outstanding set of properties like good mechanical resistance 1 , high hardness 2 and very high thermal stability 1,3,4 . Their applications may range from protective coatings against corrosion of steel 5,6 to microelectronic devices 7 and from X ray mask materials 8 to protection of thermonuclear reactor walls 9 , among others. These films can be deposited by a variety of techniques such as laser assisted deposition 10 , dynamic ion mixing 11 , plasma enhanced chemical vapor deposition 12 , magnetron sputtering 2 and many others.…”

Section: Introductionmentioning

confidence: 99%

Properties of amorphous SiC coatings deposited on WC-Co substrates

Costa

Camargo

2003

Mat. Res.

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In this work, silicon carbide films were deposited onto tungsten carbide from a sintered SiC target on a r.f. magnetron sputtering system. Based on previous results about the influence of r.f. power and argon pressure upon the properties of films deposited on silicon substrates, suitable conditions were chosen to produce high quality films on WC-Co pieces. Deposition parameters were chosen in order to obtain high deposition rates (about 30 nm/min at 400 W rf power) and acceptable residual stresses (1.5 GPa). Argon pressure affects the energy of particles so that films with higher hardness (30 GPa) were obtained at low pressures (0.05 Pa). Wear rates of the coated pieces against a chromium steel ball in a diamond suspension medium were found to be about half of the uncoated ones. Hardness and wear resistance measurements were done also in thermally annealed (200-800 °C) samples revealing the effectiveness of SiC coatings to protect tool material against severe mechanical degradation resulting of high temperature (above 500 °C) oxidation

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Section: Introductionmentioning

confidence: 99%

Properties of amorphous SiC coatings deposited on WC-Co substrates

Costa

Camargo

2003

Mat. Res.

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“…Nonetheless, before the demonstration of high seeding density by diamond nanoparticle, BEN was an effective technique to achieve high nucleation density. It has been used to grow diamond on variety of materials, [150][151][152][153][154][155][156] selective area growth [157][158][159] and heteroepitaxial growth. 36,[160][161][162][163]…”

Section: Bias Enhanced Nucleationmentioning

confidence: 99%