Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

Grodzicki, M.; Wasielewski, R.; Surma, S.; Ciszewski, A.

doi:10.12693/aphyspola.116.s-82

Cited by 9 publications

(6 citation statements)

References 7 publications

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“…The main differences between gSi 800°C and gSi 950°C and the rest of the samples (bCF, gCF) could be identified as well from the Si 2p XPS spectra. From the deconvolution of the Si 2p spectra, Si–C bonds were clearly observed in gSi 800°C and gSi 950°C around 101.20 and 101.16 eV, respectively 41 ( Table 4 ), indicating the formation of SiC nanocrystals, confirming their observation from the TEM analysis.…”

Section: Resultssupporting

confidence: 73%

Improving the Through-Thickness Thermal Conductivity of Carbon Fiber/Epoxy Laminates by Direct Growth of SiC/Graphene Heterostructures on Carbon Fibers

et al. 2023

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Poor thermal conductivity in the through-thickness direction is a critical limitation in the performance of carbon fiberreinforced polymer (CFRP) composites over a broad range of applications in the aviation industry, where heat dissipation is required (e.g., battery packs, electronic housing, and heat spreaders). In this work, it is demonstrated for the first time that a hierarchical network of vertically oriented graphene nanoflakes (GNFs), with nanoconfined silicon carbide (SiC) nanocrystals, self-assembled on carbon fibers (CFs) can provide significant improvement to the thermal conductivity (TC) of CFRPs in the through-thickness direction. The vertically aligned SiC/GNF heterostructures were grown directly on CFs for the first time by single-step plasmaenhanced chemical vapor deposition (PECVD) employing tetramethylsilane (TMS) and methane (CH 4 ) gases at temperatures of 800 and 950 °C. At the deposition temperature of 950 °C, the controlled introduction of SiC/GNF heterostructures induced a 56% improvement in through-thickness TC over the bare CFRP counterparts while simultaneously preserving the tensile strength. The increase in thermal conductivity is accomplished by SiC nanocrystals, which serve as linkage thermal conducting paths between the vertical graphene layers, further enhancing the smooth transmission of phonons in the vertical direction. The work demonstrates for the first time the unique potential of novel SiC/GNF heterostructures for attaining strong and thermally conductive multifunctional CFRPs.

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Section: Resultssupporting

confidence: 73%

Improving the Through-Thickness Thermal Conductivity of Carbon Fiber/Epoxy Laminates by Direct Growth of SiC/Graphene Heterostructures on Carbon Fibers

et al. 2023

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“…The former can be attributed to the metallic Si 0 (Si–Si bonding) while the latter is the characteristic peak for Si–C bonding. [ 33,34 ] The C 1s spectrum is characterized by a single peak at 283.0 eV. This suggests our CVD grown SiC layer is a mixture of Si and SiC which leads to the unique switching performance of the memristor.…”

Section: Resultsmentioning

confidence: 97%

Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse

Kapur

Guo

Reynolds

et al. 2022

Adv Elect Materials

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Two‐terminal memristor has emerged as one of the most promising neuromorphic artificial electronic devices for their structural resemblance to biological synapses and ability to emulate many synaptic functions. In this work, a memristor based on the back‐end‐of‐line (BEOL) material silicon carbide (SiC) is developed. The thin film memristors demonstrate excellent binary resistive switching with compliance‐free and self‐rectifying characteristics which are advantageous for the implementation of high‐density 3D crossbar memory architectures. The conductance of this SiC‐based memristor can be modulated gradually through the application of both DC and AC signals. This behavior is demonstrated to further emulate several vital synaptic functions including paired‐pulse facilitation (PPF), post‐tetanic potentiation (PTP), short‐term potentiation (STP), and spike‐rate‐dependent plasticity (SRDP). The synaptic function of learning‐forgetting‐relearning processes is successfully emulated and demonstrated using a 3 × 3 artificial synapse array. This work presents an important advance in SiC‐based memristor and its application in both memory and neuromorphic computing.

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“…The spectra of rSG materials are presented in Figure 4 f–h. Unlike hybrid reduced materials, the XPS spectra of these samples only exhibit the peaks related to Si-Si species and SiO 2 (at 99.5 eV and 103.5 eV, respectively) [ 47 , 48 ]. As reported in Table 3 , rSG-1 material contains the lowest percentage of nonreduced Si species (ca.…”

Section: Resultsmentioning

confidence: 99%

Role of Crystalline Si and SiC Species in the Performance of Reduced Hybrid C/Si Gels as Anodes for Lithium-Ion Batteries

et al. 2023

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In recent years, the research on lithium-ion batteries (LIBs) to improve their lifetime, efficiency and energy density has led to the use of silicon-based materials as a promising anode alternative to graphite. Specifically, crystalline silicon (cSi) and silicon carbide (SiC) obtained from deposition or reduction processes (e.g., magnesiothermal reduction) stand out for their electrochemical properties. However, the synthesis routes proposed until now have limitations that make them difficult to afford or operate on a large scale. For this reason, in this work, carbon-silicon (C-Si) hybrid materials synthesized through an efficient route are evaluated as the potential precursor for the obtention of both cSi and SiC species in a single material. The feasibility and influence of the magnesiothermal reduction process were evaluated, and materials with 10 wt.% of reduced Si and 10–26 wt.% of SiC were obtained. Both species play a role in the improvement of the performance of silicon-based materials as anodes in lithium-ion batteries. In comparison with materials obtained by the reduction of silica gels and composites, the reduced C-Si hybrid gels stand out thanks to the homogeneous distribution and stability of the species developed.

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Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

Cited by 9 publications

References 7 publications

Improving the Through-Thickness Thermal Conductivity of Carbon Fiber/Epoxy Laminates by Direct Growth of SiC/Graphene Heterostructures on Carbon Fibers

Improving the Through-Thickness Thermal Conductivity of Carbon Fiber/Epoxy Laminates by Direct Growth of SiC/Graphene Heterostructures on Carbon Fibers

Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse

Role of Crystalline Si and SiC Species in the Performance of Reduced Hybrid C/Si Gels as Anodes for Lithium-Ion Batteries

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