Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing

Zhang, Fan; Володин, В. А.; Баранов, Е. А.; Konstantinov, V. O.; Shchukin, V. G.; Zamchiy, A. O.; Vergnat, M.

doi:10.1016/j.vacuum.2021.110796

Cited by 9 publications

(5 citation statements)

References 31 publications

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“…For nanometer resolution, it is required to use a focused electron beam, for example, as in an electron beam nanolithography. To create periodic arrays of amorphous nanoclusters and NC-Ge, the interference of monochromatic coherent electron beams can be applied, as proposed in [15].…”

Section: Analysis Of Obtained Resultsmentioning

confidence: 99%

“…Previously, researchers [12] applied ion-beam annealing of GeO x thin films with an energy of 150MeV Ag + , which led to the formation of NC-Ge with a size of up to 30 nm. By now, abundant papers have been devoted to electron--beam annealing of amorphous germanium films [13,14], and only one paper which was devoted to electron-beam annealing of nonstoichiometric germanosilicate glasses [15]. In this paper, electron beam annealing (EBA) was used to form amorphous germanium clusters and crystallize them in GeO[SiO] and GeO[SiO 2 ] films.…”

Section: Introductionmentioning

confidence: 99%

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Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

et al. 2022

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Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and monocrystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nanoclusters are present in the as-deposited GeO[SiO] film, while they are not observed in the as-deposited GeO[SiO2] film. Regimes of electron beam annealing which are necessary for the formation of germanium nanocrystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures. Keywords: films of nonstoichiometric germanosilicate glass, electron beam annealing, germanium nanoclusters and nanocrystals.

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Section: Analysis Of Obtained Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

et al. 2022

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“…During the co-evaporation of GeO 2 and SiO, in the case of the same evaporation rate of both sources, films of nonstoichiometric germanosilicate glass with a composition of approximately GeSiO 1+z are deposited. The growth conditions and stoichiometry of the deposited films are discussed in more detail in [17,19,20].…”

Section: Materials and Methods (Experimental Methods)mentioning

confidence: 99%

Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films

et al. 2023

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Nonstoichiometric GeSixOy glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO2, SiO, SiO2, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p+-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi0.9O2.8, two-layer GeSi0.9O1.8/GeSi0.9O2.8 and GeSi0.9O1.8/SiO, and three-layer SiO2/a–Ge/GeSi0.9O2.8 MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor.

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“…Для нанометрового разрешения необходимо использовать сфокусированный пучок электронов, например, как в электронно-пучковом нанолитографе. Для создания периодических массивов аморфных нанокластеров и NC-Ge, можно использовать интерференцию монохроматических когерентных пучков электронов, как предложено в работе [15].…”

Section: анализ полученных результатовunclassified

“…Ранее исследователи [12] использовали ионно-пучковые отжиги тонких пленок GeO x ионами Ag + с энергией 150 MeV, что приводило к формированию NC-Ge с размером до 30 nm. К настоящему времени было выполнено несколько работ, посвященных электронно-пучковому отжигу аморфных пленок германия [13,14], и только одна работа, посвященная электронно-пучковому отжигу нестехиометрических германосиликатных стекол [15]. В настоящей работе электронно-пучковые отжиги (electron beam annealing, EBA) были использованы для формирования аморфных кластеров германия и их кристаллизации в пленках GeO[SiO] и GeO[SiO 2 ].…”

Section: Introductionunclassified

Формирование нанокристаллов и аморфных нанокластеров германия в пленках GeO[SiO] и GeO[SiO-=SUB=-2-=/SUB=-] с использованием электронно-пучкового отжига

Константинов¹,

Баранов²,

Zhang³

et al. 2022

Журнал Технической Физики

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Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and monocrystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nanoclusters are present in the initial GeO[SiO] film, while they are not observed in the initial GeO[SiO2] film. Regimes of electron-beam annealing which are necessary for the formation of germanium nanocrystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures.

show abstract

Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing

Cited by 9 publications

References 31 publications

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films

Формирование нанокристаллов и аморфных нанокластеров германия в пленках GeO[SiO] и GeO[SiO-=SUB=-2-=/SUB=-] с использованием электронно-пучкового отжига

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