Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Park, Byung–Eun; Ishiwara, Hiroshi

doi:10.1063/1.1556966

Cited by 130 publications

(65 citation statements)

References 5 publications

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“…LaAlO 3 with a perovskite-type structure [9] is widely used as substrates and electrically insulating buffers for depositing high-temperature superconducting films due to its high quality factor and excellent lattice and thermal expansion matching ability [2,6]. Its use as a gate dielectric material has also been explored [10,11] .In addition, LaAlO 3 powder has been studied as a catalyst for oxidative coupling of methane and hydrogenation and hydrogenolysis of hydrocarbons due to its high catalytic activity [12].Polycrystalline LaAlO 3 has been commonly prepared by a solidstate reaction method: i.e. direct mixing and firing of pure oxides of La 2 O 3 and Al 2 O 3 at temperature greater than 1550 •C [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of lanthanum monoaluminate by co-precipitation method

Djoudi

Omari

Madoui

2012

EPJ Web of Conferences

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Abstract.Our contribution has focused on the synthesis and characterization of lanthanum monoaluminate LaAlO3 by the method of co-precipitation. The powder was successfully synthesized using NaOH, La (NO 3 ) 3 .6H 2 O and Al (NO 3 ) 3 .9H 2 O as raw materials by this method and calcined at different temperatures. It was characterized by several techniques: Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TGA/DTA), X-ray diffraction (XRD) and laser diffusion. All the results for physico-chemicals characterizations show that the crystallization temperature of the LaAlO 3 precursor gels precipitated is estimated as 790 °C by TG/DTA. The XRD pattern of the LaAlO 3 precursor gels calcined at 700 •C for 6 h has a perovskite structure of rhombohedral hexagonal phase formed and the presence of crystalline impurities is not found. The crystallite size of LaAlO 3 slightly increases from 31to 44.5 nm with calcination temperature increasing from 700to1000 °C for 6 h.

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of lanthanum monoaluminate by co-precipitation method

Djoudi

Omari

Madoui

2012

EPJ Web of Conferences

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“…Furthermore, it is anticipated that deposited films may remain amorphous even in the presence of a relatively high-temperature processing (in fact, probably to 800− 850°C) so that potential sources of leakage current via grain boundaries 3 should be absent. Preliminary measurements on amorphous deposited films [4][5][6] suggest that direct leakage currents are, in fact, extremely low (at least for amorphous films) at typical operational electric fields ͑ϳ1 MV cm −1 ͒ and electrical barrier heights are large enough to minimize carrier injection from the valence or conduction bands of the Si substrate. There is, however, significant confusion over the value of the dielectric constant of these films.…”

Section: Introductionmentioning

confidence: 99%

“…7 In the case of Si substrates, film/substrate interaction was evidenced, leading to dielectric constants 7 ϳ4.9, in the Pt case, k ϳ 25-27 is quoted. 7 Electron-beam evaporation methods have also been used, 6 in which the films were deposited onto heated Si substrates (temperatures up to 800°C) and values of k ϳ 21-25 quoted. This result is surprising since for the same range of substrate temperatures, the data in Refs.…”

Section: Introductionmentioning

confidence: 99%

Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO3

Busani

Devine

2004

Journal of Applied Physics

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)AFRL/VSSE SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance # VS04-0514) SUPPLEMENTARY NOTESPublished in the J. Appl. Phys., Volume 96, Number 11, pages 6642-6647, 1 Dec 2004 ABSTRACTGrazing incidence x-ray reflectivity measurements are used to determine the density of sputter-deposited LaAlO and anodized LaAl films. Together with refractive index and dielectric constant measurements, it is demonstrated that a coherent picture emerges explaining the low dielectric constant of the amorphous films (~13) as compared to the single-crystal value (~26). The importance of molecular volume dependence of the electronic and vibrational molecular polarizabilities is underlined. Grazing incidence x-ray reflectivity measurements are used to determine the density of sputter-deposited LaAlO 3 and anodized LaAl films. Together with refractive index and dielectric constant measurements, it is demonstrated that a coherent picture emerges explaining the low dielectric constant of the amorphous films ͑ϳ13͒ as compared to the single-crystal value ͑ϳ26͒. The importance of molecular volume dependence of the electronic and vibrational molecular polarizabilities is underlined.

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“…Experimental studies have been restricted to amorphous or polycrystalline LAO layers on silicon [11,12,13,14]. Theoretical contributions are limited to a study of a (2 × 1) reconstructed interface [15].…”

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Structural and Electronic Properties of the Interface between the High-kOxideLaAlO3and Si(001)

2005

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The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption structures on silicon. A phase diagram of the interface stability is calculated as a function of oxygen and Al chemical potentials. We find that an electronically saturated interface is obtained only if Al atoms substitute some of the interfacial Si atoms. These findings raise serious doubts whether LaAlO3 can be used as an epitaxial gate dielectric.

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Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Abstract: Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition

Cited by 130 publications

References 5 publications

Synthesis and characterization of lanthanum monoaluminate by co-precipitation method

Synthesis and characterization of lanthanum monoaluminate by co-precipitation method

Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO3

Structural and Electronic Properties of the Interface between the High-kOxideLaAlO3and Si(001)

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