We demonstrate a
potential candidate, the 0D “all-inorganic”
perovskite material Cs2TeI6, as a sensitive
all-inorganic X-ray photoconductor for the development of the new
generation of direct photon-to-current conversion flat-panel X-ray
imagers. Cs2TeI6 consists of high atomic number
elements, has high electrical resistance, and exhibits high air and
moisture stability, making it suitable as a sensitive X-ray photoconductor.
In addition, we identify that Cs2TeI6 film can
be prepared under a low-temperature process using electrostatic-assisted
spray technique under atmospheric conditions and achieved resistivity
of 4.2 × 1010 Ω·cm. The resulting air-
and water-stable Cs2TeI6 device exhibits a strong
photoresponse to X-ray radiation. An electron drift length on the
order of 200 μm is estimated under an applied electrical field
strength of 400 V·cm–1. A high sensitivity
for Cs2TeI6 thick film device is realized, with
the value of 192 nC·R–1cm–2 under 40 kVp X-rays at an electrical field of 250 V·cm–1, which is ∼20 times higher than that of the
hybrid 3D perovskite polycrystalline film X-ray detectors. X-ray imaging
based on Cs2TeI6 perovskite films will require
lower radiation doses in many medical and security check applications.