2008
DOI: 10.1016/j.apsusc.2008.01.101
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Formation of nano-hillocks by impact of swift heavy ions on thin films of TiO2

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Cited by 29 publications
(15 citation statements)
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“…Formation of nanosized oblate hillocks on the surface of irradiated films was investigated by AFM studies. The shape and size of nanoparticles formed is dependent on the irradiation fluence [686][687][688]. Romero-Gomez et al studied the low energy ion irradiation effect on TiO 2 thin film.…”
Section: Ion Beam: Synthesis and Modification Of Nanostructure For Momentioning
confidence: 98%
“…Formation of nanosized oblate hillocks on the surface of irradiated films was investigated by AFM studies. The shape and size of nanoparticles formed is dependent on the irradiation fluence [686][687][688]. Romero-Gomez et al studied the low energy ion irradiation effect on TiO 2 thin film.…”
Section: Ion Beam: Synthesis and Modification Of Nanostructure For Momentioning
confidence: 98%
“…31 The absorbed energy at lower doses enhances the di®usion of host atoms across the grain boundaries as a result the crystallite size increases. 34 The amorphous to crystalline phase transition is also observed by Thakurdesai et al 35 when TiO 2¯l ms were irradiated with 100 MeV Ag ions at°uence from 1 Â 10 12 to 1 Â 10 13 ions/cm 2 . However, with further increase of ion dose, the crystallite size of TiN¯lm decreases.…”
Section: Xrd Analysismentioning
confidence: 66%
“…This transfer of energy is responsible for the formation/removal of defects, ordering/disordering, structural strain, modi¯cation in structural and other properties of target material. 33 The golden color of the¯lms, as well as appearance of XRD peaks at angle 35 Table 2.…”
Section: Xrd Analysismentioning
confidence: 98%
“…For G-TiO 2 nanocomposites, there is not much known yet about the exact nature of the defects caused by swift heavy ion irradiation. However, in the case of Si beams with S e smaller than the threshold values of S e required for the latent track formation in TiO 2 and graphite ( S eth = 6.2 keV/nm, S eth = 7 keV/nm), the resulting defects should be caused predominantly by direct collisions, giving rise mainly to the formation of point defects. These point defects have a much weaker effect on the variation of I D / I G , I 2D / I G , and φ.…”
Section: Resultsmentioning
confidence: 98%