Formation of nanometer-scale InAs islands on silicon

Sharma, Prakash Chandra; Alt, K. W.; Yeh, D. Y.; Wang, D.; Wang, K. L.

doi:10.1007/s11664-999-0091-1

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…Literature analysis shows that regimented or partially regimented 2D and 3D QDS have been fabricated by a variety of techniques [5,30,36,43]. Electrochemically self-assembled 2D arrays of quantum dots in alumina templates are characterized by high degree of periodicity but by little wave function overlap [7].…”

Section: Conditions For Mini-band Formation In Qdsmentioning

confidence: 99%

“…Electrochemically self-assembled 2D arrays of quantum dots in alumina templates are characterized by high degree of periodicity but by little wave function overlap [7]. Multiple arrays of Ge dots on Si grown by molecular beam epitaxy (MBE), on the other hand, are good candidates for mini-band formations although the dots in these structures are only partially regimented [30,36]. A successful synthesis of 3D regimented QDs has also been reported [41,42].…”

Section: Conditions For Mini-band Formation In Qdsmentioning

confidence: 99%

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Solar cell nanotechnology for improved efficiency and radiation hardness

et al. 2006

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Space electronic equipment, and NASA future exploration missions in particular, require improvements in solar cell efficiency and radiation hardness. Novel nano-engineered materials and quantum-dot array based photovoltaic devices promise to deliver more efficient, lightweight solar cells and arrays which will be of high value to long term space missions. In this paper, we describe issues related to the development of the quantum-dot based solar cells and comprehensive software tools for simulation of the nanostructure-based photovoltaic cells. Some experimental results used for the model validation are also reviewed. The novel modeling and simulation tools for the quantum-dot-based nanostructures help to better understand and predict behavior of the nano-devices and novel materials in space environment, assess technologies, devices, and materials for new electronic systems as well as to better evaluate the performance and radiation response of the devices at an early design stage. The overall objective is to investigate and design new photovoltaic structures based on quantum dots (QDs) with improved efficiency and radiation hardness. The inherently radiation tolerant quantum dots of variable sizes maximize absorption of different light wavelengths, i.e., create a "multicolor" cell, which improves photovoltaic efficiency and diminishes the radiation-induced degradation. The QD models described here are being integrated into the advanced photonic-electronic device simulator NanoTCAD, which can be useful for the optimization of QD superlattices as well as for the development and exploring of new solar cell designs.

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Section: Conditions For Mini-band Formation In Qdsmentioning

confidence: 99%

Section: Conditions For Mini-band Formation In Qdsmentioning

confidence: 99%

Solar cell nanotechnology for improved efficiency and radiation hardness

et al. 2006

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“…The use of thin films as semiconductor surface THz emitters, has not been widely studied although a number of very recent works on the THz generation from InAs thin films have been reported; yielding promising results [15,16]. The highquality thin film growth of InAs on a Si substrate, however, is not easily achieved due to the 11% lattice mismatch between these two materials [17]. In this work, we address this issue by studying GaAs thin films on Si substrates since the lattice mismatch of GaAs and Si is only 4% [18,19].…”

mentioning

confidence: 99%

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

Yoshioka

Takatori

Minh

et al. 2011

J Infrared Milli Terahz Waves

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We report on the terahertz emission from femtosecond-laser-irradiated GaAs layers grown on Si(100) and Si (111) substrates. The results show that the terahertz emission from GaAs on Si is stronger than that of a semi-insulating bulk GaAs crystal. This increase is attributed to the strain field at the GaAs/Si interface. In the GaAs of the Si(100) sample, the stronger terahertz emission is observed compared with GaAs on Si(111). Moreover, the effect of changing the doping type of the Si substrate from n-type to semi-insulating was also studied and it was found that the terahertz emission intensity of GaAs on semi-insulating Si(100) is stronger than that of GaAs on n-type Si(100). Finally, strong terahertz emission from GaAs on semiinsulating Si(100) was observed not only in the reflection geometry but also in the transmission geometry. These results hold promise for new applications of terahertz optoelectronics.

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Effect of growth parameters on the formation of three‐dimensional InAs islands on (001) silicon substrate

Lim

Song

Choi

et al. 2010

Physica Status Solidi (a)

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The purpose of this work is to find optimal conditions for the growth of three‐dimensional (3D) InAs islands on (2 × 1) (001) Si substrate using modified Stranski–Krastanow (S–K) method. From the analysis of atomic‐force‐microscopy (AFM) images and reflection‐high‐energy‐electron‐diffraction (RHEED) patterns, we have found that InAs islands can be grown on Si when the growth temperature is in the range of 370–430 °C and also when In‐injection of more than three periods is used. At the growth temperature of 390 °C and In‐injection of four periods, uniform distribution of islands with the highest density of about 600 /µm2 were obtained. The average width and height of these islands were 36.1 ± 9.2 nm and 6.2 ± 2.0 nm, respectively.

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Formation of nanometer-scale InAs islands on silicon

Cited by 15 publications

References 14 publications

Solar cell nanotechnology for improved efficiency and radiation hardness

Solar cell nanotechnology for improved efficiency and radiation hardness

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

Effect of growth parameters on the formation of three‐dimensional InAs islands on (001) silicon substrate

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