Effect of growth parameters on the formation of three‐dimensional InAs islands on (001) silicon substrate

Abstract

The purpose of this work is to find optimal conditions for the growth of three‐dimensional (3D) InAs islands on (2 × 1) (001) Si substrate using modified Stranski–Krastanow (S–K) method. From the analysis of atomic‐force‐microscopy (AFM) images and reflection‐high‐energy‐electron‐diffraction (RHEED) patterns, we have found that InAs islands can be grown on Si when the growth temperature is in the range of 370–430 °C and also when In‐injection of more than three periods is used. At the growth temperature of 390 °C and In‐injection of four periods, uniform distribution of islands with the highest density of about 600 /µm2 were obtained. The average width and height of these islands were 36.1 ± 9.2 nm and 6.2 ± 2.0 nm, respectively.

Growth of high‐quality InSb layer on (001) Si substrate with an initial intermediate‐layer of InAs quantum dots

“…For the growth of InSb/InAs/Si structure in this work, the solid‐source molecular‐beam‐epitaxy equipment was used. The details of the experimental processes for the treatment of the p‐type, (001)‐Si substrate, and for the growth of InAs QDs can be found in our earlier work 14. In particular, the proper formation of InAs QDs used in this work was confirmed by reflection‐high‐energy‐electron‐diffraction (RHEED) and atomic‐force‐microscopy (AFM) analysis as described in the same reference.…”

Epitaxial growth of CdTe films on GaAs-buffered (001) Si substrates by metal organic chemical vapor deposition

“…The substrate was loaded into an MBE chamber and heated to 840 1C for thermal cleaning. The complete de-oxidation of the substrate was confirmed by the two-fold reflection highenergy electron diffraction (RHEED) pattern [11]. After thermal cleaning, a GaAs layer was deposited onto the (001) Si substrate at 550 1C.…”