Growth of high‐quality InSb layer on (001) Si substrate with an initial intermediate‐layer of InAs quantum dots

Abstract

In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb‐growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8‐µm‐thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm2/Vs at 300 K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate.

Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

“…The synthesis of indium antimonide thin films with a defined chemical composition and crystallinity is a difficult task. Currently, the most commonly used techniques are thermal evaporation, 6 solid-source molecular beam epitaxy, 7 electron beam evaporation, 8 radio frequency sputtering 9 and metalorganic chemical vapor deposition (MOCVD). 10,11 Among others, electrodeposition is a relatively low cost and easy to use method that allows to synthesize binary and ternary compounds with different compositions.…”