Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Hnida, Katarzyna E.; Bäßler, Svenja; Mech, Justyna; Szaciłowski, Konrad; Socha, Robert P.; Gajewska, Marta; Nielsch, Kornelius; Przybylski, M.; Sulka, Grzegorz D.

doi:10.1039/c5tc03656a

Cited by 26 publications

(9 citation statements)

References 32 publications

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“…These data are in agreement with the previously reported binding energies of In 3d doublet components at 444.2-444.3 eV and 451.8-451.9 eV for bulk and thin film InSb. [37,38] The contributions from In 2 O 3 appear with a chemical shift of 1.0 eV, reasonably falling in the expected range shift 0.4-1.4 eV. [37,39,40] A quantitative analysis of the integrated XPS peak area can provide the concentration of the elements and can provide the stoichiometry of the different states evident in the XPS fit results.…”

Section: Resultsmentioning

confidence: 89%

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Field Emission Characteristics of InSb Patterned Nanowires

Giubileo¹,

Passacantando

Urban

et al. 2020

Adv Elect Materials

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properties toward next-generation electronic, optoelectronic, and photovoltaic devices, [1,5-8] such as field-effect-transistors, [9-11] and infrared detectors. [12,13] For instance, high mobility up to 77 000 cm 2 V −1 s −1 have been reported in InSb NWbased field-effect-transistors. [9] The use of InSb NWs to realize IR detectors working from mid-to long wavelength region has been reported. [14,15] Mid-infrared photodetectors based on a metal-semiconductormetal structure have been fabricated using electrochemically synthesized InSb NWs, showing high stability and excellent responsivity (8.4 × 10 4 AW −1). [15] Such enhanced properties have been explained in terms of high surface-to-volume ratio and 1D nanostructure of the photodetectors that significantly reduce the scattering and trapping phenomena, as well as the transit time between the electrodes. Multispectral optical absorptance in the short and mid-IR regions has been demonstrated [12] in top-down etched InSb NWs arrays, obtained by reactive ion etching of thin films produced by molecular beam epitaxy. In particular, it is possible to obtain highly tunable absorptance from 1.61 to 6.86 µm. [12] Furthermore, InSb NWs with diameter below 50 nm reach the quantum capacitance limit, providing significant improvement in device performance. [16] Single crystalline n-type InSb NWs have also been demonstrated as gas sensors at room temperature for NO 2 detection down to one part-per-million. [17] InSb NWs are promising candidates also for developing large area cold cathodes. It has been reported that the electron tunneling barrier is reduced due to high carrier concentration and relevant surface accumulation layer in InSb NWs. [18] This InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by a top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tip anode inside of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of 1 µA, corresponding to a current density as high as 10 4 A cm −2. Stability and robustness of the nanowire is probed by monitoring field emission current for about 3 h. By tuning the cathode-anode distance in the range 500-1300 nm, the field enhancement factor and the turn-on field exhibit non-monotonic dependence, with maximum enhancement β ≈ 78 and minimum turn-on field E ON ≈ 0.033 V nm −1 for a separation d = 900 nm. The reduction of pitch between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement (β < 60) and increased turn-on field (E ON ≈ 0.050 V nm −1). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.

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Section: Resultsmentioning

confidence: 89%

“…These data are in agreement with the previously reported binding energies of In 3d doublet components at 444.2–444.3 eV and 451.8–451.9 eV for bulk and thin film InSb. [ 37,38 ] The contributions from In 2 O 3 appear with a chemical shift of 1.0 eV, reasonably falling in the expected range shift 0.4–1.4 eV. [ 37,39,40 ]…”

Section: Resultsmentioning

confidence: 91%

Field Emission Characteristics of InSb Patterned Nanowires

Giubileo¹,

Passacantando

Urban

et al. 2020

Adv Elect Materials

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“…1), the size of the crystallites of InSb QDs was calculated to be 37.16 nm using Scherrer equation. 33,45,46,54 Morphology of InSb QDs was studied by FESEM and shown in Fig. 2a.…”

Section: Structural and Morphological Analysismentioning

confidence: 99%

“…[29][30][31][32] Most of works reported on in situ growth and deposition of InSb thin lms. [33][34][35][36] Only few works have been reported on the synthesis of InSb QDs. 37,38 Therefore, in the present work, the growth conditions for the formation of InSb QDs were initially optimized and examined its suitability as a photo sensitizer for different QDSSC cell structures with and without cosensitization of CdS.…”

Section: Introductionmentioning

confidence: 99%

Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

et al. 2020

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“…In fact, plasmons, which are collective charge excitations of the electron and hole gas in graphene, may be generated by fluctuations of the chemical potential. These fluctuations are induced by an external electromagnetic field [10,64,1,25,48,45,47,34]. The most pronounced electronhole fluctuations are usually created in the vicinity of the Dirac point of the electron spectrum that characterises graphene [27].…”

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confidence: 99%

The emergence of quantum capacitance in epitaxial graphene

et al. 2016

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We found an intrinsic redistribution of charge arises between epitaxial graphene, which has intrinsically n-type doping, and an undoped substrate. In particular, we studied in detail epitaxial graphene layers thermally elaborated on C-terminated $4H$-$SiC$ ($4H$-$SiC$ ($000{\bar{1}}$)). We have investigated the charge distribution in graphene-substrate systems using Raman spectroscopy. The influence of the substrate plasmons on the longitudinal optical phonons of the $SiC$ substrates has been detected. The associated charge redistribution reveals the formation of a capacitance between the graphene and the substrate. Thus, we give for the first time direct evidence that the excess negative charge in epitaxial monolayer graphene could be self-compensated by the $SiC$ substrate without initial doping. This induced a previously unseen redistribution of the charge-carrier density at the substrate-graphene interface. There a quantum capacitor appears, without resorting to any intentional external doping, as is fundamentally required for epitaxial graphene. Although we have determined the electric field existing inside the capacitor and revealed the presence of a minigap ($\approx 4.3meV$) for epitaxial graphene on $4H$-$SiC$ face terminated carbon, it remains small in comparison to that obtained for graphene on face terminated $Si$. The fundamental electronic properties found here in graphene on $SiC$ substrates may be important for developing the next generation of quantum technologies and electronic/plasmonic devices.Comment: 26 pages, 8 figures, available online as uncorrected proof, Journal of Materials Chemistry C (2016

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Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Abstract: Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Cited by 26 publications

References 32 publications

Field Emission Characteristics of InSb Patterned Nanowires

Field Emission Characteristics of InSb Patterned Nanowires

Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

The emergence of quantum capacitance in epitaxial graphene

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