Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In x Al 1– x Sb was used to grow high-quality InSb films on GaAs substrates. The CGB layer was grown by continuously changing the growth temperature and composition of the aluminum and indium during the growth of the buffer layer. Degradation of electrical properties, which normally accompany carrier-defect scattering in a heteroepitaxial layer, was minimized by using the CGB layer. The electrical properties of the InSb films were characterized by Hall measurements, and the electron mobility of the 100 nm-thick InSb film had the largest value, of 39 290 cm 2 /V·s, among reports of similar thickness. To investigate the relationship between electrical and structural properties, the 100 nm thick InSb film was characterized by energy-dispersive spectroscopy and transmission electron microscopy.

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“…Therefore, as defects are reduced by curing processes during growth, the electron mobility of the film increases. 14,17−21,23…”

Section: Resultsmentioning

confidence: 99%

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

Kang

Park²,

Shin³

et al. 2018

ACS Omega

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“…3(a) . Figure 3(b) shows the fractions of P As2 and P As4 as a function of T when P total is fixed at 4 × 10 −9 atm, which is comparable to the usual vacuum level for the MBE chamber 13 , 14 , 28 . In Fig.…”

Section: Resultsmentioning

confidence: 77%

“…The bulk states of As can be regarded as the surrounding reservoir and present either in a solid state with the rhombohedral crystalline structure or in two forms of gaseous states: As 2 and As 4 . Liquid phase As was ruled out because the triple point of As appears at 35.8 atm and 1090K while the growth conditions of the thin film in the MBE chamber are a high vacuum and a temperature of around 750K 11 – 13 , 28 . On the other hand, the pressure of In gas has been known to be ~1 order lower than that of As gas in the MBE chamber 29 and hence can be ignored.…”

Section: Resultsmentioning

confidence: 99%

Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics

Yeu

Park

Han

et al. 2017

Sci Rep

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A detailed understanding of the atomic configuration of the compound semiconductor surface, especially after reconstruction, is very important for the device fabrication and performance. While there have been numerous experimental studies using the scanning probe techniques, further theoretical studies on surface reconstruction are necessary to promote the clear understanding of the origins and development of such subtle surface structures. In this work, therefore, a pressure-temperature surface reconstruction diagram was constructed for the model case of the InAs (001) surface considering both the vibrational entropy and configurational entropy based on the density functional theory. Notably, the equilibrium fraction of various reconstructions was determined as a function of the pressure and temperature, not as a function of the chemical potential, which largely facilitated the direct comparison with the experiments. By taking into account the entropy effects, the coexistence of the multiple reconstructions and the fractional change of each reconstruction by the thermodynamic condition were predicted and were in agreement with the previous experimental observations. This work provides the community with a useful framework for such type of theoretical studies.

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“…After growth of the QD layer, the samples were annealed for 1 min. The InAs QD layer acts as an intermediate layer to reduce defects caused by the substantial lattice mismatch between the GaAs substrates and the Sb-based epilayers [8]. Because InAs is a material with a lattice parameter between that of GaAs and that of the…”

Section: Growth Of Sb-based Epilayers On Gaas By Using Mbementioning

confidence: 99%

“…In Ref. [8], the authors showed that 2.6 μm thick InSb layers grown on GaAs by using an InAs QD defect reduction layer exhibit an electron mobility of 67,890 cm 2 /Vs at 300 K. In another report, the mobility of ∼ 6 μm thick InSb layers grown on GaAs by using a similar QD defect reduction layer were ∼ 78, 000 cm 2 /Vs at 300 K [9], which is comparable to that of InSb layers grown on InSb substrates (∼ 80, 000 cm 2 /Vs at 300 K). These results indicate that high quality InSb layers were grown on GaAs by using the proposed defect reduction technique.…”

Section: Growth Of Sb-based Epilayers On Gaas By Using Mbementioning

confidence: 99%

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Hussain

Pettersson

Wang

et al. 2018

J. Korean Phys. Soc.

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Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.

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Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

Cited by 8 publications

References 26 publications

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

Cited by 8 publications

References 26 publications

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer

Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

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Product

Resources

About

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer