High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In_xAl_1–xSb Continuously Graded Buffer Layer

Abstract

In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In x Al 1– x Sb was used to grow high-quality InSb films on GaAs substrates. The CGB layer was grown by continuously changing the growth temperature and composition of the aluminum and indium during the growth of the buffer layer. Degradation of electrical properties, which normally accompany carrier-defect scattering in a heteroepitaxial layer, was minimized by using the CGB layer. The electrical properties of the InSb films were characterized by Hall measurements, and the electron mobility of the 100 nm-thick InSb film had the largest value, of 39 290 cm 2 /V·s, among reports of similar thickness. To investigate the relationship between electrical and structural properties, the 100 nm thick InSb film was characterized by energy-dispersive spectroscopy and transmission electron microscopy.

Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

“…Using the reciprocal lattice constants of the GaAs layer in each direction, which were 2.93 nm −1 , 2.96 nm −1 , and 3.41 nm −1 from the selected-area diffraction (SAD) pattern, the diffracted plane was indexed based on the reported data, as shown in Fig. 3 b 22 – 24 . Moreover, using the reciprocal lattice constants of GaSb in each direction, which were 2.60 nm −1 , 2.71 nm −1 , and 3.17 nm −1 , the diffracted plane was indexed, as shown in Fig.…”