The growth of GaSb/Al0.33Ga0.67Sb MQW on n-Silicon (100) with Al0.66Ga0.34Sb/AlSb SPS layers

Yoen, Kyu Hyoek; Song, Jin Dong; Lee, Eun Hye; Jang, Hye Joung; Bae, Mi-Kyung; Kim, Jun Young; Han, Il Ki; Choi, Won Jun

doi:10.1016/j.materresbull.2014.05.040

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…This is a critical issue for electrical device applications. The authors are presently working on developing the technology to grow Sb-based materials on large-area Si substrates in line with the "More than Moore" concept [10].…”

Section: Growth Of Sb-based Epilayers On Gaas By Using Mbementioning

confidence: 99%

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Hussain

Pettersson

Wang

et al. 2018

J. Korean Phys. Soc.

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Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.

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Section: Growth Of Sb-based Epilayers On Gaas By Using Mbementioning

confidence: 99%

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Hussain

Pettersson

Wang

et al. 2018

J. Korean Phys. Soc.

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“…The growth of the polar GaSb material on the non-polar Si surface and the large lattice mismatch (12.1%) between these two materials lead to significant challenges for the growth of GaSb thin films on Si substrates. [11][12][13] Additionally, a high-k dielectric is needed for GaSb-based MOS devices, and the band-offset parameters between the high-k dielectric=GaSb channel should be larger than 2 eV in order to suppress the leakage current. [14][15][16] The goal of this study is to demonstrate a high-quality GaSb epilayer grown on Si for CMOS applications.…”

mentioning

confidence: 99%

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Huynh

Binh

et al. 2018

Appl. Phys. Express

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A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al 2 O 3 /GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al 2 O 3 /p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance-voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal-oxide semiconductor applications.

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First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy

et al. 2021

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The growth of GaSb/Al0.33Ga0.67Sb MQW on n-Silicon (100) with Al0.66Ga0.34Sb/AlSb SPS layers

Cited by 6 publications

References 13 publications

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy

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