Formation of NdSi₂Phase by High-Current Nd-Ion Implantation

Abstract

Continuous NdSi 2 phase layers could be obtained by high-current Nd-ion implantation into Si using a metal vapor vacuum arc ion source and the formation temperature could be relatively low in the range from 165 to 320 C. Furthermore, the surface morphology of the Nd-ion implanted surface varied with the implantation parameters. The formation mechanism of the NdSi 2 phase as well as its continuous layer is also discussed in terms of the temperature rise caused by ion beam heating and variations of the ion dose in the Nd-ion implantation process.