Continuous NdSi 2 phase layers could be obtained by high-current Nd-ion implantation into Si using a metal vapor vacuum arc ion source and the formation temperature could be relatively low in the range from 165 to 320 C. Furthermore, the surface morphology of the Nd-ion implanted surface varied with the implantation parameters. The formation mechanism of the NdSi 2 phase as well as its continuous layer is also discussed in terms of the temperature rise caused by ion beam heating and variations of the ion dose in the Nd-ion implantation process.

The shapes of three low-energy resonance features in the photoionisation of neutral neon are calculated along with the total cross section in the low-energy region. The lowest singly excited resonance is in particularly good agreement with experiment. The complex amplitudes in the vicinity of the lines are plotted and discussed as an aid to understanding aspects of these resonance features. The experimental absence of the ls22s22p43s4p line, in particular, seems to be the result of the two open-channel amplitudes' fluctuating out of phase so that the sum of the resulting partial cross sections is not measurably disturbed.