Formation of Organic Nanodots on Indium Tin Oxide Using Molecular Aggregation during Self-Assembled Monolayer-Treatment Method

Abstract

During the investigation of a fluorinated self-assembled monolayer (SAM), we discovered that organic nanodots could be fabricated on rough indium tin oxides surface by a molecular aggregation during SAM-treatment method. Generally, organic nanodots are fabricated by vaporizing an organic material on smooth SAM-modified substrates because of the difference in surface free energy between two materials. In this method, organic nanodots can be formed by self-aggregating organic molecules and the pushing due to growing SAM regions on the indium tin oxide (ITO) substrate. The size of the organic nanodots can be controlled by adjusting the predeposited organic layer thickness.

Estimation of Electron Current in Organic Light-Emitting Diodes Using an Operating Point Model

“…We investigated the stability of film morphology [20], the carrier injection and device properties [21][22][23][24][25][26][27], and the formation of nano-dot [28] by preparation of fluorinated alkyl silole derivative on indium-tin-oxide (ITO). Especially it is important that the introduction of fluorinated self-assembled monolayer (FSAM) based on alkyl silole derivative improves the hole injection from ITO into a hole-transport material as a hole injection layer.…”

Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

“…The introduction of FSAM suppressed the polycrystallization of a hole transport material, lowered the driving voltage and improved the lifetime of device [1][2][3]. In addition, we introduced the new process of organic nano-dot by growing FSAM [4].…”

Effects of Using a Ag Anode with a Co-evaporation Thin Film of MoOx and α-Naphthyl Diamine Derivative in Organic Light-Emitting Diode

“…7) Therefore, it is an effective and powerful material modification for organic electronic devices. [8][9][10][11][12] For OLEDs, Campbell et al reported that carrier injection from the metal to the organic layer can be controlled by forming an interfacial dipole layer by the introduction of SAM between Ag and poly[2-methoxy-5-(2 0 -ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV). 13) Sano et al showed that degradation of the tris(8-hydroxyquinolinato)aluminum (Alq3) layer can be suppressed by the introduction of SAM between ITO and N,N 0 -bis(1-naphthyl)- 14) Molybdenum oxide (MoO x ) is an effective material used as a hole-injection layer (HIL) between the ITO layer and the hole-transport layer (HTL).…”