2009
DOI: 10.1587/transele.e92.c.616
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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

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Cited by 30 publications
(29 citation statements)
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“…The application of high density nanometer-sized dots to a floating gate (FG) has been attracting much attention because of several advantages over a conventional single planar FG [1][2][3][4][5][6]. Essentially, the charge storage in individual nanodots leads to superior charge retention against gate oxide degradation.…”
Section: Intorductionmentioning
confidence: 99%
“…The application of high density nanometer-sized dots to a floating gate (FG) has been attracting much attention because of several advantages over a conventional single planar FG [1][2][3][4][5][6]. Essentially, the charge storage in individual nanodots leads to superior charge retention against gate oxide degradation.…”
Section: Intorductionmentioning
confidence: 99%
“…The replacement of a planar floating gate (FG) with nanodots FG in MOS memories has been attracting much attention because of its potential advantages in charge storage characteristics [1][2][3][4][5][6]. In general, charge storage in individual nanodots is practically expected to provide superior charge retention and endurance characteristics against degradation of gate oxide reliability.…”
Section: Introductionmentioning
confidence: 99%
“…The charging and discharging characteristics of metallic NDs through an ultrathin oxide layer depend on their electrostatic potential. So far, we reported that Ni-, Co-, Pt-, and Fe-NDs with an areal density as high as ~10 11 cm −2 were formed on ultrathin SiO 2 by exposing an ultrathin metal layer to a remote H 2 plasma (H 2 -RP) without external heating, and demonstrated their charge storage properties 35 36 37 38 39 40 . More recently, we reported on the formation of magnetic NDs made of CoPt alloy formed by exposing a bi-layer metal stack to a remote H 2 plasma (H 2 -RP) and characterized their magnetization properties 41 .…”
mentioning
confidence: 99%