A new mechanism of superfast motion of resistive domains in anisotropic superconductors is suggested. For bicrystals or sandwiches of anisotropic superconducting materials, the superfast motion is shown to arise due to the additional Joule heating of the kink regions of a resistive domain by eddy currents associated with them. Conditions under which the resistive domain in an anisotropic superconductor moves with a velocity up to the Fermi velocity, ∼10 8 cm s −1 , are discussed. As a result of the superfast motion, generation of electric oscillations of high amplitude with frequencies up to 10 10 Hz can take place. † Temporary address:

We have proposed and fabricated a hybrid nanodots floating gate (FG), in which Si quantum dots (QDs) as charge injection/emission nodes and NiSi nanodots as charge storage nodes are stacked with an ultrathin SiO 2 interlayer, to satisfy both large memory window and multivalued capability. In this study, Si-QDs with an areal density of ~3x10 11 cm -2 were formed on ultrathin SiO 2 layer by controlling SiH 4 chemical vapor deposition (CVD) and NiSi nanodots were prepared by full-silicidation of Si-QDs promoted with remote H 2 -plasma exposure after Ni evaporation. From capacitance-voltage(C-V) characteristics of MOS capacitors with a NiSi nanodots/Si-QDs hybrid FG, stable storage of many charges in the deep potential well of each NiSi nanodot was confirmed. Also, by applying pulsed gate biases, stepwise charge injection to and emission from NiSi nanodots through discrete energy states in Si-QDs were demonstrated. In addition, by 1310nm (~0.95eV) light irradiation, a distinct optical response in C-V characteristics was detected, which can be interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from NiSi-nanodots to the Si-QDs.