Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures

Morisawa, Naoya; Ikeda, Mitsuhisa; Nakanishi, Sho; Kawanami, Akira; Makihara, Katsunori; Miyazaki, Seiichi

doi:10.1143/jjap.49.04dj04

Cited by 6 publications

(7 citation statements)

References 9 publications

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“…Under positive V g , electrons were stored within the Si nanocrystals, while holes tunneled to the density of states of the device substrate, enabling a fast programming speed (i.e., 10 –8 to 10 –6 s) which is approximately 10 3 times faster than that of the electrically programmed devices. An experimental demonstration of a Si QD-based optical flash device has been reported by Morisawa et al The floating gate comprised a light-sensitive NiSi nanodot film sandwiched between two Si QD layers. To reveal the impact of optical treatment on the charge carrier transfer, the capacitance–voltage ( C – V ) characteristics were performed.…”

Section: Qds In Flash Memorymentioning

confidence: 99%

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

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The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

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Section: Qds In Flash Memorymentioning

confidence: 99%

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

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“…2, which was determined by high-resolution x-ray photoemission measurements [12]. [ 16,17]. In fact, C-V characteristics of MOS capacitors with a triply-stacked hybrid NDs FG seen in Fig.…”

Section: Resultsmentioning

confidence: 99%

(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

Miyazaki¹,

Ikeda

Makihara³

2013

ECS Trans.

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We have designed and fabricated hybrid nanodots structures, in which Si quantum dots (QDs) and either Ni-silicide or Pt-silicide nanodots (NDs) are stacked with ultrathin SiO 2 interlayer, as a novel functional floating gate (FG) to satisfy both multiple valued capability and large capacity on charge storage. Multiple-step charge injection to silicide NDs through discrete energy states in Si-QDs and stable storage of many charges in deep potential wells in silicide NDs have been confirmed from electrical characteristics of MOS capacitors and transistors measured at room temperature. A unique optical response of the hybrid NDs FG to near-infrared light irradiation, which is caused by the transfer of photo-excited electrons from silicide NDs to Si-QDs, has also been demonstrated.

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“…The slow response speed is mainly due to small tunneling rate through interlayer oxide [17] and partly due to misalignment in NDs stack. In fact, with a decrease in the internal oxide down to ~1.4nm, a response speed of the order of ten milliseconds was obtained even at zero gate bias [18].…”

Section: Electrical Characterization Of Hybrid Fgmentioning

confidence: 99%

(Invited) Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices

Miyazaki

2011

ECS Trans.

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Hybrid nanodots (NDs) structures have been designed and fabricated as a noble functional floating gate, in which Si quantum dots (QDs) as charge counting nodes and either Ni- or Pt-silicide NDs as charge storage nodes are stacked with an ultrathin SiO2 interlayer, to satisfy both large memory windows and multi-valued capability. MOS capacitors and nMOSFETs with a hybrid FG show clear characteristics caused by stable storage of many charges in the deep potential well of each silicide ND and stepwise charge injection to and emission from NDs through discrete energy states in Si-QDs. In addition, a distinct optical response to 1310nm light irradiation was detected in the C-V characteristics, being interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from silicide NDs to the Si-QDs.

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Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures

Cited by 6 publications

References 9 publications

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

(Invited) Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices

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