Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

Wang, Dong; Ji, Ran; Schaaf, Peter

doi:10.3762/bjnano.2.37

Cited by 100 publications

(93 citation statements)

References 44 publications

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“…On the other hand, however, above a critical thickness of the deposited AuPd film, the AuPd NPs show higher mean size (versus the film thickness) on substrate B than on substrate A, indicating that the AuPd film interacts with the substrate topography during the dewetting process. These results are quantified and discussed by the description of the substrate topography effect on the excess of chemical potential driving the dewetting process [48][49][50].…”

Section: Introductionmentioning

confidence: 99%

“…In fact, generally, the dewetting of deposited thin metal films is analyzed on flat substrates [39][40][41][42][43][44][45][46][47]. However, some works demonstrated that specific intentional patterning of substrate Affects the spatial distribution and size of the NPs formed by the dewetting process of a deposited film [48][49][50][51]. The FTO layer that we use as substrate is un-intentionally patterned since it is formed by FTO pyramids randomly distributed on the glass slide as result of the deposition process of the same FTO layer [52,53], namely substrate A.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Ruffino¹

2017

Metals

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AuPd nanoparticles are formed on fluorine-doped tin oxide (FTO) by a nanosecond laser irradiation-induced dewetting process of deposited AuPd films. In particular, we analyze the effect of the surface topography of the substrate on the dewetting process and, so, on the final mean size of the formed nanoparticles. In fact, we used two supporting FTO substrates differing in the surface topography: we used a FTO layer which is un-intentionally patterned since it is formed by FTO pyramids randomly distributed on the glass slide as result of the deposition process of the same FTO layer, namely substrate A. We used, also, a further FTO substrate, namely substrate B, presenting, as a result of a chemical etching process, a higher roughness and higher mean distance between nearest-neighbor pyramids with respect to substrate A. The results concerning the size of the obtained AuPd NPs by the laser irradiations with the laser fluence fixed shows that the substrate topography impacts on the dewetting process. In particular, we found that below a critical thickness of the deposited AuPd film, the NPs formed on substrates A and B have similar size and a similar trend for the evolution of their size versus the film thickness (i.e., the dewetting process is not influenced by the substrate topography since the film does not interact with the substrate topography). On the other hand, however, above a critical thickness of the deposited AuPd film, the AuPd NPs show a higher mean size (versus the film thickness) on substrate B than on substrate A, indicating that the AuPd film interacts with the substrate topography during the dewetting process. These results are quantified and discussed by the description of the substrate topography effect on the excess of chemical potential driving the dewetting process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Ruffino¹

2017

Metals

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“…For polycrystalline metallic films, dewetting is also affected by the character of grain boundaries [89]. Concerning all effects above, dewetting of polycrystalline metallic films on a flat substrate usually leads to a broad distribution of particle size and spacing [90].…”

Section: Sample Preparationmentioning

confidence: 99%

“…Therefore, it is important to control the thermal dewetting procedure. Previous studies [90,91] on the dewetting process of thin metal films show that the key parameters which can tune the particle size and density after thermal dewetting are the film thickness (h au ) , the dewetting temperature (T ann ), and the dewetting time (t ann ) . In order to understand how these three parameters influence the NWs growth results after the dewetting process, Gomes et al [92] …”

Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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“…The first method, based on the thermal dewetting of a gold layer, has already shown promising results on patterned substrates [18] and on one diatom species [10]. The second method involves the modification of the frustules surface using a coating of polyethylene glycol (PEG).…”

Section: Introductionmentioning

confidence: 99%

Nanopatterning and plasmonic properties of plasma sputtered gold on diatom frustules

Romann

Einarsrud

2013

MRS Proc.

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Bio-silica nanostructures from diatoms (called frustules) featuring plasmonic gold nanoparticles (NPs) are elaborated using two methods based on plasma sputtering of gold. The first investigated method uses a thermal treatment to induce the thermal dewetting of a plasma sputtered gold layer on the diatom frustules. The second method first consists of coating the frustules with polyethylene glycol before sputtering gold on these frustules. For both methods, the amount of gold appears to be a key parameter regarding the final obtained layer, which can either be nanostructured by cavities or consist in individual gold NPs. For an amount of sputtered gold equivalent to form a 5 nm thick layer, both methods allow obtaining diatom frustules covered by gold NPs with a size around 20 nm and a narrow size distribution. The UV-visible characterization of the diatom frustules featuring gold NPs highlights a plasmon extinction band in agreement with individual gold NPs with a size below 25 nm.

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Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

Cited by 100 publications

References 44 publications

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Experimental Analysis on the Molten-Phase Dewetting Characteristics of AuPd Alloy Films on Topographically-Structured Substrates

Growth of III-V semiconductor nanowires and their heterostructures

Nanopatterning and plasmonic properties of plasma sputtered gold on diatom frustules

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