Formation of selenium-containing complexes in silicon

Taskin, A. A.; Tishkovskii, E. G.

doi:10.1134/1.1485656

Cited by 10 publications

(4 citation statements)

References 14 publications

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“…41,42 In contrast, and as expected, no such increase in n s has been observed upon annealing silicon hyperdoped with shallow dopant impurities (B, P, As, Sb). 4,15,16,20,21 The ionization energies of isolated impurities for these shallow dopants are so small that they are essentially all ionized at room temperature, so producing clusters with smaller ionization energies would not result in an increase in n s .…”

Section: B Evolution Of the Sulfur Chemical Statesupporting

confidence: 64%

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Simmons

Akey

Krich

et al. 2013

Journal of Applied Physics

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Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal treatment. We explore this deactivation process through optical absorption and electronic transport measurements of sulfur-hyperdoped silicon subject to anneals at a range of durations and temperatures. The deactivation process is well described by the Johnson-Mehl-AvramiKolmogorov framework for the diffusion-mediated transformation of a metastable supersaturated solid solution, and we find that this transformation is characterized by an apparent activation energy of E A ¼ 1:7 6 0:1 eV. Using this activation energy, the evolution of the optical and electronic properties for all anneal duration-temperature combinations collapse onto distinct curves as a function of the extent of reaction. We provide a mechanistic interpretation of this deactivation based on short-range thermally activated atomic movements of the dopants to form sulfur complexes. V C 2013 AIP Publishing LLC. [http://dx

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Section: B Evolution Of the Sulfur Chemical Statesupporting

confidence: 64%

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Simmons

Akey

Krich

et al. 2013

Journal of Applied Physics

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“…Since no known dopant can explain this low energy activation, we suggest that this low-temperature donor originates from Ti complexes and/or defects. It has been reported that some deep donors can reduce the activation energy when forming complexes in Si: Se [22][23][24], S [25], or Au [26]. In particular, in [27], which is related to IR photodetectors, the author studies the effect of the 'lower ionization energies than the isolated impurities' for S and Se.…”

Section: Rta-fabricated Samplesmentioning

confidence: 99%

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Olea¹,

González-Dı́az²,

Pastor³

et al. 2022

Semicond. Sci. Technol.

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In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by Rapid Thermal Annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by Pulsed-Laser Melting (PLM). We measured the electronic transport properties at variable temperature and analysed the results. Results indicate that for RTA samples the surface layer with a high Ti concentration has a negligible conductivity due to defects. On the contrary, the implantation tail region, which has a measurable conductivity due to a very high electron mobility. This region shows the activation of a very shallow donor and of a deep donor level. While the deep level has been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer-Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.

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“…Chalcogen defect centers have been studied extensively in diffusion experiments; isolated substitutional impurities and dimer pairs are the most common point defects, and other more complex defect centers have been identified. 9,10 These known defect centers introduce deep states that allow sub-bandgap photon absorption, however, in samples with chalcogen dopant concentrations up to 7 ϫ 10 16 cm −3 , no significant broadband, sub-bandgap absorptance has been reported. 11,12 In femtosecond-laser chalcogen-hyperdoped silicon studied in this letter, the initial dopant concentration 2 is at least 1000 times larger than the high-temperature equilibrium solubility achieved via solid-state thermal diffusion from a chalcogenrich surface source: 3 ϫ 10 16 cm −3 for S and 2 ϫ 10 17 cm −3 for Se.…”

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confidence: 99%

Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon

Newman

Sher

Mazur

et al. 2011

Applied Physics Letters

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Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 and 1550 K followed by fast cooling ͑Ͼ50 K / s͒. Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high temperatures in hyperdoped Si:chalcogen systems.

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Formation of selenium-containing complexes in silicon

Cited by 10 publications

References 14 publications

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon

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