Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam

Abstract

Controlled positioning and ordering of uniform self-assembled droplets on a patterned GaAs (100) substrate is demonstrated using a Ga+ focused ion beam. The arrangement of the droplets into an array of droplet chains is induced by changes in the surface morphology during irradiation as a function of sputtering time. Energy dispersive x-ray spectroscopy reveals that the droplets are Ga-rich. The patterned surface may be of interest for plasmonic studies and may find application as a template for site-specific epitaxial growth of unstrained quantum dot chains utilizing local droplet etching and droplet epitaxy techniques.

Surface nanopatterning by ion beam irradiation: compositional effects

“…A special case is the bombardment of a GaAs (100) surface with a 20 keV Ga + FIB at an incidence angle of 52 • [139], since this surface is a compound and is being irradiated with ions of one of its elements. In this experiment, not only straight trenches are formed with increasing ion fluence, but they also become decorated at the top with self-assembled Ga-rich droplets, around 35 nm in height and 125 nm in width.…”

Оптические свойства трехмерных островков InGaP(As), сформированных методом замещения элементов пятой группы

“…Разработаны различные технологические режимы эпитаксиального роста самоорганизующихся КТ или последующего отжига структуры, позволившие уменьшить плотность КТ InAs/InP до < 10 9 cm −2 [8], КТ InAs/InGaAsP/InP (100) до 1.3 • 10 9 cm −2 [9], КТ CdTe до 10 7 −10 8 cm −2 [10]. Также для создания КТ низкой плотности, применяется более сложный метод формирования с использованием ростовой поверхности предустановленной морфологии (site-controlled epitaxy) [11,12].…”