Formation of semitransparent CuAlSe2 thin films grown on transparent conducting oxide substrates by selenization

Optical Properties of Copper Aluminium Diselenide Thin Films under the Influence of Ammonium Solution as pH Adjuster

“…5 and it was found increases from 2.3 eV to 3.0 eV as pH values decrease. These energies are slightly higher than earlier reported by [13] this can be attributed to the effect of grain size and the crystal quality was decreases with increasing pH value in solution …”

“…Some studies of Cu(In,Al)Se2 (CIAS), CuGaSe2 (CGS) and Cu(In,Ga)Se2 (CIGS) thin films on transparent coated oxide (TCO) substrates obtained great results with efficiencies around 15% [4][5][6][7]. Several methods of deposition of CuAlSe2 thin films [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. CBD method is preferred for its simplicity, inexpensive and capability to achieve large surface area coatings [16].…”

Crystallization of wide-bandgap CuAlSe2 thin films deposited on antimony doped tin oxide substrates

“…It has been shown in a previous work [9] that the formation and crystallization of CAS thin films on bare and TCO-coated substrates (ITO and AZO) takes place from a minimum temperature of 500 C. The annealing temperature is limited by the properties of the SLG substrates which can be damaged for higher temperatures. Fig.…”

“…In the first step, Cu and Al precursor layers have been sequentially deposited onto bare and ATO-coated SLG substrates by e-beam evaporation of Cu and thermal evaporation of Al in a vacuum chamber with a base pressure of 10 À5 Pa. During the precursor deposition, the substrates have been rotated and an oscillatory quartz crystal microbalance has monitored the growth rates and thicknesses of the individual layers in order to control the overall Cu/Al ¼ 1 atomic ratio with global Cu and Al thicknesses increasing from 80e270 nm and 110e370 nm, respectively. Based on previous works for the optimization of the metallic layers deposition sequence for CuInSe 2 [23] and CuAlSe 2 [9], a SLG/ATO/Al/Cu/Al sequence has been used.…”

“…This deposition method allows the individual control of the thicknesses of the metallic precursor layers which have effects on the morphological, structural and optoelectronic properties of the selenized CAS films. However, the homogeneous formation and complete crystallization of CuAlSe 2 thin films from metallic precursors has resulted to be no trivial and depends strongly on the type of substrate and preparation conditions [8,9].…”