Formation of Silica Films on Silicon Using Silane and Carbon Dioxide

Abstract

The reaction of silane with carbon dioxide to form silica on silicon in the temperature range 700~176 has been studied. The results of surface charge density (Qss) and breakdown voltage (EBb) measurements on the silica film are discussed. Etch rates, weight density, and infrared spectra obtained for these films are compared with those exhibited by oxide films thermally grown with steam. The dependence of the reaction yield on reactor design is briefly discussed.