Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

“…Improvement of electrical characteristics of the epitaxial layers of SiC in devices is achieved by the ion implantation and subsequent thermal annealing owing to an annihilation and redistribution of RD and modify of the structure of the material surface [4][5][6][7]. High-intensity short-pulse implantation (HISPI) of ions followed by heating of the surface layer provides simultaneous annealing of RD [8,9]. The aim of the work is to study the structural, electrical and optical characteristics of ceramic SiC before and after irradiation in the regimes of high-power ion beams (HPIB) and HISPI of carbon ions С + and to establish the reasons of the properties change.…”