Formation of silicon nitride compound layers by high-dose nitrogen implantation

Tsujide, T.; Nojiri, Masaharu; Kitagawa, Hirohisa

doi:10.1063/1.327763

Cited by 53 publications

(16 citation statements)

References 9 publications

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“…This had been reported to occur in high temperature annealing (4,7). Sharp absorption dips indicate that amorphous silicon nitride crystallizes to ram a-phase SisN4.…”

Section: ~mentioning

confidence: 70%

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Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Chiu¹,

Bernt²,

Ruge³

1982

J. Electrochem. Soc.

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An ion milling system was used to implant low energy ni'trogen into an Si surface. The material composition and Si-N bonding of the film after various annealing conditions were investigated using grazing angle backscattering and infrared transmission spectroscopy. The ratio of Si to N was about 1 in the as-implanted films. After thermal annealing, the film composition changed and approached that of a stoichiometric nitride. Oxidation resistance of the film in wet and dry ambients was studied. Examination of the LOCOS profile revealed a marked decrease in the lateral oxidation as compared to the conventional process. The film exhibited insulating characteristics after 4 hr annealing at 900~ in nitrogen. beam irradiation, Rutherford backscattering. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP Vol. 129, No. 2 NITROGEN IMPLANTATION INTO SILICON 409 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP

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“…This had been reported to occur in high temperature annealing (4,7). Sharp absorption dips indicate that amorphous silicon nitride crystallizes to ram a-phase SisN4.…”

Section: ~mentioning

confidence: 70%

“…The very broad absorption region around 800 to 900 cm -1 is attributed to Si-N bonding (1,3,4,7). (7). 1.…”

Section: Resultsmentioning

confidence: 99%

Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Chiu¹,

Bernt²,

Ruge³

1982

J. Electrochem. Soc.

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“…The most widespread doping approach is N-doping via ion implantation, which has been demonstrated to be particularly successful to incorporate nitrogen-containing species into as-produced TiO 2 nanotube structures at low-to-medium doping levels (1 × 10 16 ions cm −2 ) [75,80]. However, this doping method is limited by the short ion penetration depth, recrystallization requirement and inhomogeneous dopant distribution across the inner and top surface of EENMs [37,81,82]. Despite these constraints, well-defined buried junctions can be created into the inner surface of EENMs by rational utilization of the implantation profiles [80].…”

Section: Dopingmentioning

confidence: 99%

Electrochemical Engineering of Nanoporous Materials for Photocatalysis: Fundamentals, Advances, and Perspectives

et al. 2019

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Photocatalysis comprises a variety of light-driven processes in which solar energy is converted into green chemical energy to drive reactions such as water splitting for hydrogen energy generation, degradation of environmental pollutants, CO2 reduction and NH3 production. Electrochemically engineered nanoporous materials are attractive photocatalyst platforms for a plethora of applications due to their large effective surface area, highly controllable and tuneable light-harvesting capabilities, efficient charge carrier separation and enhanced diffusion of reactive species. Such tailor-made nanoporous substrates with rational chemical and structural designs provide new exciting opportunities to develop advanced optical semiconductor structures capable of performing precise and versatile control over light–matter interactions to harness electromagnetic waves with unprecedented high efficiency and selectivity for photocatalysis. This review introduces fundamental developments and recent advances of electrochemically engineered nanoporous materials and their application as platforms for photocatalysis, with a final prospective outlook about this dynamic field.

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“…This was Paper 37~ presented at the Denver, Colorado, Meeting of the Society, Oct. [11][12][13][14][15][16] 1981.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

Bouchier¹,

Gautherin²,

Schwebel³

et al. 1983

J. Electrochem. Soc.

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The deposition mechanism of reactive ion beam sputtered silicon nitride was studied. Using RBS analysis, the composition of SixN~ layers deposited at room temperature has been investigated as a function of different parameters. Irrespective of the nitrogen partial pressure, ranging from 10 _4 to 0.2 Pa, the stoichiometry of the film depends only on the sputtering yield of silicon in the range 0.4-20 keV. Si3N4 layers can be obtained at low voltage, but only with a low deposition rate (typically I nm/min at our experimental conditions). In order to obtain Si3N4 films with higher deposition rates, we increased the nitridation of deposited silicon, either by introducing in the deposition chamber a highly reactive molecule such as NH3, or by using electronic bombardment, which stimulates the adsorption of N2 on the growing film.

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Formation of silicon nitride compound layers by high-dose nitrogen implantation

Abstract: Formation of ferromagnetic iron nitrides in iron thin films by highdose nitrogen ion implantation

Cited by 53 publications

References 9 publications

Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Electrochemical Engineering of Nanoporous Materials for Photocatalysis: Fundamentals, Advances, and Perspectives

Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

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