We present a novel process technology, which enables precision micro machining of glass wafers. With this Glass Flow Process GFT [1,21, which is based on viscous deformation at temperatures above the glass transition temperature T,, any surface topography available on a silicon substrate can be moulded into Borosilicate glasses, especially into bondable glasses'like Borofloat' or Pyrex'. Beside the replication of silicon structures this technique allows the fabrication of optical micro lens arrays with high aspect ratios and minimum spacing. Introducing this GFP technology to MEMS processing enables the deep structuring of glass substrates and opens a wide range of new applications. Optical quality micro lenses with saggital heights above 100 pm are demonstrated.In this paper an insight description of the GFP technology is given and the functionality of this new technology is presented by optical measurements of micro lens demonstrators.

Multipotentiostats are the equipment commonly used for voltammetric measurements with multichannel electrode arrays, because the conditioning of the working electrodes does not allow fast multiplexing for measuring current responses. In this article, multiplexing and serial read‐out of electrode arrays using a simple potentiostat and integrated circuits are shown. Several specially constructed switches, which were integrated in an application specific integrated circuit (ASIC) in complementary metal oxide semiconductor (CMOS) technology, allow electrode potentials to be applied as if by a potentiostat during the read‐out time as well as continuously applying a bias voltage during stand‐by. The application of multiplexing and serial read‐out is demonstrated by redox recycling of p‐aminophenol in an interdigitated microelectrode array made in silicon technology. Here, a bipotentiostat generates two different potentials that are addressed by the ASIC to the anodes and cathodes for redox recycling. The results show the same quality as those using a multipotentiostat.

A rapid thermal oxidation process of silicon in N20 ambient was investigated using a commercially available reactor with a fixed wafer position and a gas flow parallel to the wafer surface. For such a configuration, thickness uniformities in the 2% range were obtained for the first time. The oxidation rate as a function of process temperature and time was investigated. A retardation in the N20 oxidation rate as compared to the oxidation in O2 ambient is explained by the formation of a nitrided interracial layer. A comparison of experimental results with an oxidation model calculation shows that this interface can affect either the oxidant diffusivity through the oxide or the reaction rate at the silicon surface. Infrared spectra of nitrided oxide films reveal a regular arrangement in the Si-O network, similar to that of high quality thermally grown oxides. A vibrational contribution to that spectrum from a Si-ON subnetwork is displayed. The accumulated charge to breakdown on metal-oxide-semiconductor capacitors as a function of the injected current density revealed different slopes for oxides either thermally grown or grown in N20. Hence, the projected lifetime for devices with N20 grown oxide under low operating fields is extended by one order of magnitude in comparison with th e thermal oxide.

An ion milling system was used to implant low energy ni'trogen into an Si surface. The material composition and Si-N bonding of the film after various annealing conditions were investigated using grazing angle backscattering and infrared transmission spectroscopy. The ratio of Si to N was about 1 in the as-implanted films. After thermal annealing, the film composition changed and approached that of a stoichiometric nitride. Oxidation resistance of the film in wet and dry ambients was studied. Examination of the LOCOS profile revealed a marked decrease in the lateral oxidation as compared to the conventional process. The film exhibited insulating characteristics after 4 hr annealing at 900~ in nitrogen. beam irradiation, Rutherford backscattering. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP Vol. 129, No. 2 NITROGEN IMPLANTATION INTO SILICON 409 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP

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