Formation of silicon on plasma synthesized aluminum nitride structure by ion cutting

Abstract

Articles you may be interested inEnhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure J. Appl. Phys. 112, 044905 (2012); 10.1063/1.4748048 Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator J. Appl. Phys. 98, 053502 (2005); 10.1063/1.2034651 Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun Rev. Sci. Instrum. 75, 719 (2004); 10.1063/1.1646741 Growth of aluminum nitride on (111) silicon: Microstructure and interface structureThe application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by self-heating effects due to the poor thermal conductivity of the buried SiO 2 layer. We propose to replace the buried SiO 2 layer in SOI with a plasma synthesized AlN thin film to mitigate the self-heating penalty. The AlN films synthesized on silicon by metal plasma immersion ion implantation and deposition exhibit outstanding surface topography and excellent insulating characteristics. Using a modified direct bonding process in conjunction with hydrogen-induced layer transfer, a silicon-on-AlN structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and spreading resistance profiling results reveal a uniform buried AlN layer beneath a single crystal Si overlayer. The interfaces between the top Si layer, buried AlN layer, and Si substrate are smooth and sharp. Moreover, the use of relatively thick buried AlN layer bodes well for SOI wafers in high voltage and high power applications.