Formation of silicon ultra shallow junction by non-melt excimer laser treatment

Florakis, A.; Papadimitriou, Athanasios; Chatzipanagiotis, N.; Misra, Nipun; Grigoropoulos, Costas P.; Tsoukalas, D.

doi:10.1016/j.sse.2010.04.025

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…The corresponding sheet resistance around 1.6 kΩ/sq also indicates a considerable boron activation in doped region. The research group further worked on simulation of plasma doping and ELA process using Synopsys Sentaurus Process software tool and Kinetic Monte Carlo approach [66]. The calculated results is in good agreement with experimental data.…”

Section: Ion Implantation and Advanced Annealing Techniquesmentioning

confidence: 75%

“…Annealing technique is another hot topic in the research of ultra-shallow doping. The desire to maximize dopant activation with minimized diffusion in USJ fabrication has reignited the research interests in subsecond annealing techniques such as FLA [61][62][63][64] and PLA [62,[65][66][67][68][69] that were first proposed in late 1970s [70,71].…”

Section: Ion Implantation and Advanced Annealing Techniquesmentioning

confidence: 99%

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Advances in ultrashallow doping of silicon

Zhang

Chang

Dan

2021

Advances in Physics: X

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Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

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Section: Ion Implantation and Advanced Annealing Techniquesmentioning

confidence: 75%

Section: Ion Implantation and Advanced Annealing Techniquesmentioning

confidence: 99%

Advances in ultrashallow doping of silicon

Zhang

Chang

Dan

2021

Advances in Physics: X

View full text Add to dashboard Cite

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“…It was found that the optimal USJ was obtained when eight laser pulses were irradiated at an energy density level of 130 mJ/cm 2 . Florakis et al [20] carried out experimental and numerical studies of non-melt excimer laser annealing to form the USJ in boron-implanted silicon. The evolution of the temperature distribution along the surface and volume of the material were calculated to analyze the boron kinetics and activation.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process

Choi

Shin

2021

Applied Sciences

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Laser thermal annealing (LTA) has played an important role in the fabrication of scaled semiconductor devices by reducing the heat budget of the dopant activation process. During the laser annealing of entire wafer areas, the beam scanning pattern and overlap ratio have significant effects on uniform heating during the process. In this study, a numerical simulation of the LTA process was carried out using a three-dimensional transient heat transfer model. The temperature distribution produced by different laser scan paths and beam overlap ratios was analyzed. Additionally, the behavior of the dopant (phosphorus) diffusion induced under the multipath and beam overlapping conditions was numerically investigated. According to the simulation result, a zig-zag pattern generated hot spots around the corner areas of the beam path due to the greater heat accumulation per unit area; however, a bidirectional pattern induced cold spots due to the absence of laser heating around the corner areas. It was also found that the maximum temperature reachable in the beam overlapped region was much lower than that obtained along the beam scanning path, and the most uniform heating could be obtained when the zig-zag pattern and a 50% overlap ratio were used. According to the dopant diffusion and concentration distribution predicted for the case of the zig-zag pattern and 50% overlap ratio, the difference in the dopant diffusion length was approximately thirty times within the scanned area.

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“…These doped regions can act as emitters, back-surface fields (BSFs), and floating junctions in solar cell structures. [1][2][3][4][5][6][7][8] LD can be performed in an ambient atmosphere at room temperature. In LD, only the irradiated area is heated and impurities diffuse to the substrate without thermal damage.…”

Section: Introductionmentioning

confidence: 99%

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

Nishimura¹,

Okamura²,

Yamamoto³

et al. 2014

Jpn. J. Appl. Phys.

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Increasing energy conversion efficiency without any extra cost is required for crystalline silicon (c-Si) solar cells. Laser doping (LD) can meet these requirements because it can be performed in an ambient atmosphere at room temperature. In this study, spin-coated phosphorus silicate glass (PSG) was formed on textured c-Si as a precursor for LD. We found that after LD, the reinforcement of the interface between PSG and the Si surface improved the photovoltaic characteristics V oc and J sc. The interface was reinforced by changing the c-Si surface from hydrophobic to hydrophilic before spin coating. The reinforced interface led to a reduction in the number of surface voids and an enhancement of the transfer of dopant atoms.

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Formation of silicon ultra shallow junction by non-melt excimer laser treatment

Cited by 5 publications

References 9 publications

Advances in ultrashallow doping of silicon

Advances in ultrashallow doping of silicon

Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

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