Formation of silicon Ultra Shallow Junction by nonmelt excimer laser treatment

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

“…The pocket doping is taken as 5x10 19 cm -3 such that the 3 nm of pocket width always remains fully depleted in order for p-n-p-n TFET to work properly [9]. The source and drain junctions are assumed to be abrupt, as with some of the recently reported techniques such as Plasma doping (PLAD) and Excimer Laser Annealing (ELA), it is possible to obtain abrupt junctions [18,19]. With a recently proposed technique (dopant profile-steepening implant (DPSI)) [20] it is possible to achieve a doping gradient as steep as 1 nm/dec, resulting in almost abrupt tunneling junction and alleviating the problem of doping smear out at the tunneling junction.…”