Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

Zhuo, Zeteng; Sannomiya, Yuta; Goto, Kazuma; Yamada, Takahiro; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

doi:10.1016/j.cap.2012.04.015

Cited by 8 publications

(8 citation statements)

References 24 publications

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“…The obtained D it,MG results, that is, ~(2.5–22.5) × 10 11 eV −1 cm −2 , are in the range of published values for D it,MG for the interface of SiO x and SiN x deposited on silicon wafers, that is, ~10 10 –10 11 eV −1 cm −2 and ~10 11 –10 12 eV −1 cm −2 , respectively. Annealing at 400 °C reduced D it,MG .…”

Section: Discussionsupporting

confidence: 63%

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

Preissler

Töfflinger

Gabriel

et al. 2016

Progress in Photovoltaics

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The passivation quality at the interface between liquid-phase crystallized silicon (LPC-Si) and a dielectric interlayer (IL) was investigated in terms of the defect state density at the IL/LPC-Si interface (D it ) as well as the effective fixed charge density in the IL (Q IL,eff ). Both parameters were obtained via high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on a molybdenum layer sandwiched between the IL and the glass substrate. D it and Q IL,eff were correlated to the open circuit voltage (V oc ) and the integrated external quantum efficiency (J sc,EQE ) obtained on corresponding solar cell structures as well as to V oc and J sc,EQE results based on two-dimensional simulations. We found that D it was reduced by one order of magnitude using a hydrogen plasma treatment (HPT) at 400°C. Irrespectively of the HPT, Q IL,eff was > 10 12 cm À2 . We suggest that field-effect passivation dominates chemical passivation at the IL/n-type LPC-Si interface. We attribute the significant enhancement of V oc and J sc,EQE observed after HPT on n-type LPC-Si solar cells mainly to improvements of the passivation quality in the n-type LPC-Si bulk rather than at the IL/n-type LPC-Si interface. For p-type absorbers, the HPT did not improve V oc and J sc,EQE significantly. We propose that this is because of an insufficient passivation of bulk defects by positively charged hydrogen, which dominates in p-type silicon, in combination with an insufficient interface passivation.

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Section: Discussionsupporting

confidence: 63%

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

Preissler

Töfflinger

Gabriel

et al. 2016

Progress in Photovoltaics

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“…We have also reported that the AP VHF plasma oxidation process at 400°C is capable of producing material quality of SiO 2 films comparable to those of high-temperature (>1,000°C) thermal oxides. The SiO 2 /Si structure with low interface state density ( D it ) around the midgap of 1.4 × 10 10 cm −2 eV −1 and moderately high Q f of 5.3 × 10 11 cm −2 has been demonstrated [ 18 ]. Therefore, addition of N into the SiO 2 film by AP plasma oxidation-nitridation using O 2 and N 2 precursor gas mixture is an alternative approach for obtaining SiO x N y films at a low temperature of 400°C.…”

Section: Introductionmentioning

confidence: 99%

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

et al. 2013

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SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (Dit) and positive fixed charge density (Qf). After forming gas anneal, Dit decreases largely with decreasing N2/O2 flow ratio from 1 to 0.01 while the change of Qf is insignificant. These results suggest that low N2/O2 flow ratio is a key parameter to achieve a low Dit and relatively high Qf, which is effective for field effect passivation of n-type Si surfaces.

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“…On the other hand, in PECVD, by placing a dielectric layer between the electrodes to increase the mean free path of plasma species and avoid arc discharge, high‐quality deposition as a consequence of stable and uniform discharge plasma can be achieved at atmospheric pressure. Most of the previous atmospheric pressure PECVD studies are implemented at elevated temperatures, i.e., 100–450 °C . To realize room‐temperature operation and stable deposition, in this work we use a carefully controlled microsecond‐pulse voltage with optimized ramping rate, frequency, and amplitude (see Experimental Section in the Supporting Information).…”

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confidence: 99%

A Scalable, High‐Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures

et al. 2018

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Dielectric capacitors are the key components in advanced electronics and electrical systems owing to their highest power density among the electrical energy devices. [1][2][3][4][5][6][7] While ceramic dielectrics are of large dielectric constants and high thermal stability, [8][9][10][11][12] polymer dielectrics possess high tolerance to voltage, great reliability, scalability, and light weight, and therefore are preferred for high-energy-density high-power film capacitors. [13][14][15][16][17] However, the current polymer dielectrics are unable to match the temperature requirements of the emerging applications of electrical energy storage and conversion in harsh environments [18][19][20][21][22] because of their inherently poor thermal stability. For example, while the near-engine-temperature in electric vehicles can reach to above 120 °C, [23] the operating temperature of biaxially oriented polypropylene (BOPP), which is the best commercially available polymer dielectric and currently used in power inverters of electric vehicles, is below 105 °C. [24] The wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride that are well positioned to replace traditional silicon power devices boost the operating temperatures of next-generation capacitors beyond 150 °C. [19] To address these urging needs, a variety of engineering polymers with high thermal stability, such as polyimides (PIs) and fluorene polyesters (FPEs), have been exploited as high-temperature dielectric materials. [20,25] Unfortunately, all the polymers show poor charge-discharge efficiencies under elevated temperatures and high applied fields, [26] which is due to sharply increased electrical conduction attributable to various temperature-and field-dependent conduction mechanisms, e.g., charge injection at the electrode/dielectric interface. [27,28] Ceramic dielectrics are relatively insensitive to temperature and able to maintain the energy-storage performance throughout a broad temperature range, [8][9][10][11][12] but they still suffer from considerable energy loss under high electric fields and elevated temperatures. [29] More recently, the addition of 2D wide bandgap nanostructures such as boron nitride nanosheets (BNNSs) into the polymer has been demonstrated to effectively reduce the conduction loss and largely improve the charge-discharge High-temperature capability is critical for polymer dielectrics in the nextgeneration capacitors demanded in harsh-environment electronics and electrical-power applications. It is well recognized that the energy-storage capabilities of dielectrics are degraded drastically with increasing temperature due to the exponential increase of conduction loss. Here, a general and scalable method to enable significant improvement of the high-temperature capacitive performance of the current polymer dielectrics is reported. The high-temperature capacitive properties in terms of discharged energy density and the charge-discharge efficiency of the polymer films coated with SiO 2 via plasma-enhanced chemical...

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Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

Cited by 8 publications

References 24 publications

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

A Scalable, High‐Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures

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