Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self‐organized anisotropic strain engineering

Abstract

We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self‐organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three‐dimensionally self‐ordered QD crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)