Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

Rivière, J.P.; Texier, Damien; Delafond, J.; Jaouen, M.; Mathé, E.L.; Chaumont, J.

doi:10.1016/0167-577x(94)00233-9

Cited by 104 publications

(15 citation statements)

References 13 publications

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“…Raman spectrum (Fig. 3) is consistent with a graphitic structure [two bands : 1370 cm-I (D) and 1590 cm-I (G)] [7]. XPS analysis underlines that nitrogen adopt two different surrounding : one corresponding to the C-N aromatic bond and the second to the N atoms.…”

Section: Fig 1 X-ray Diffraction Pattern Of C3n4 Samplesupporting

confidence: 51%

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

Demazeau

Montigaud

Bernard

et al. 1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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Section: Fig 1 X-ray Diffraction Pattern Of C3n4 Samplesupporting

confidence: 51%

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

Demazeau

Montigaud

Bernard

et al. 1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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“…Figure 4 shows the XRD spectra of the as-deposited carbon nitride films on the Si-wafer with the different DC biases. Several experimental data registered in ICDD (International Center for Diffraction Data) were used for reference (50-0845, 50-1249, 50-1250, 50-1512) [16][17][18]. All samples in Fig.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si3N4/Si Substrate by RF Magnetron Sputtering System with DC Bias

Lee

2004

J Electroceram

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Crystalline carbon nitride films were deposited on Si and Si 3 N 4 /Si substrate by reactive RF magnetron sputtering system with chamber heating and DC bias. The deposited films showed α-C 3 N 4 , β-C 3 N 4 and lonsdaleite phase by XRD, XPS and FTIR. The crystalline morphology was found to gave a hexagonal structure, which has theoretical unit cell of carbon nitride observed in SEM photographs. When nitrogen gas ratio is 70%, RF power is 300 W and DC bias is -80 V, the growth rate of carbon nitride film on Si 3 N 4 substrate is 2.2 µm/hr, which is a relatively high growth rate compared with those in previously reported papers. The deposited films have thermally stable properties in the range of 650 • C to 1,400 • C.

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“…20,21 These outcomes have inspired theoretical calculations [22][23][24][25][26] and experimental efforts to synthesize and distinguish this compound. [27][28][29][30][31][32][33][34][35][36][37][38] From the synthesis of amorphous C-N lms, 30,32,36 small crystallites have been discovered in some of these lms. 31,[33][34][35] C 3 N 4 is a chemically stable compound having a good thermal hardness and astonishing optical characteristics that make it suitable as a photocatalyst under visible light.…”

Section: Introductionmentioning

confidence: 99%

“…[27][28][29][30][31][32][33][34][35][36][37][38] From the synthesis of amorphous C-N lms, 30,32,36 small crystallites have been discovered in some of these lms. 31,[33][34][35] C 3 N 4 is a chemically stable compound having a good thermal hardness and astonishing optical characteristics that make it suitable as a photocatalyst under visible light. The pursuit of C 3 N 4 has potential for introducing new materials with band gap in the 2.6-3.0 eV range for energy, solar, and LED materials.…”

Section: Introductionmentioning

confidence: 99%

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

2014

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The linear and nonlinear optical susceptibilities of AA and AB stacking of the carbon nitride polymorph were calculated using the all electron full potential linear augmented plane wave method based on density functional theory. The complex part of the dielectric function is calculated using the recently modified Becke and Johnson (mBJ) approximation which gives a better optical gap in comparison to the Ceperley-Alder (CA) local density approximation, the Perdew-Burke-Ernzerhof generalized gradient approximation, and the Engel-Vosko generalized gradient approximation. The complex dielectric function and other optical constants like refractive index, absorption coefficient, reflectivity and energy loss function are calculated and discussed in detail. The calculated uniaxial anisotropy (À1.06 and À1.04)gives a maximum value of birefringence (À0.89 and À0.87) which increases the suitability of both AA and AB stacking for a large second harmonic generation. The calculated second order susceptibility tensor components |c 333 (u)| at the static limit are calculated to be (1.6 Â 10 À30 esu and 9.6 Â 10 À30 esu) respectively.

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Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

Cited by 104 publications

References 13 publications

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si3N4/Si Substrate by RF Magnetron Sputtering System with DC Bias

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)

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Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

Cited by 104 publications

References 13 publications

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

The Stabilization of C3N4: New Development of Such a Material as Macroscopic Sample.

Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si3N4/Si Substrate by RF Magnetron Sputtering System with DC Bias

Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C3N4)

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Linear and nonlinear optical properties for AA and AB stacking of carbon nitride polymorph (C₃N₄)