Formation of titled clusters in the electrochemical deposition of copper on n-GaAs(001)

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

“…Another surprising finding was that the (0 0 1) planes of the epitaxial Cu islands show an isotropic inclination with the GaAs(0 0 1) planes of 6° [20]. These interesting results raise the question to which extent they are typical in general for the epitaxy of Cu on GaAs(0 0 1) and to which extent they are specific for the electro deposition process.…”

In Situ Optical and Electrochemical AFM Monitoring of Cu Electrodeposition Process on Bare and (NH[sub 4])[sub 2]S-Treated p-GaAs(001) Surfaces

“…[4][5][6] Smilgies et al showed that the <100> direction of the deposited Cu was aligned with the <110> direction of the n-GaAs(001) surface by using X-ray diffraction. 7 We also found that Cu nanoclusters with a shorter Cu-Cu distance than that of the bulk Cu were formed during an early stage of Cu electrochemical deposition on a p-GaAs(001) electrode by using in situ surface extended X-ray absorption fine structure (EXAFS). 8,9 Scherb et al examined the structure of the Cu deposition in n-and p-GaAs(001) by X-ray standing waves.…”

Structural Study of Electrochemically Deposited Cu on p-GaAs(100) in H2SO4 Solution by In Situ Surface-Sensitive X-ray Absorption Fine Structure Measurements

“…[12][13][14][15][16] Although the structures of electrochemically deposited Cu on metal have already been investigated by many research groups, [17][18][19][20][21][22] only a few studies on the electrochemical deposition of Cu on semiconductor electrodes have been carried out. [23][24][25][26][27][28][29] GaAs is one of the most attractive semiconductor materials used in various electronic devices and dry/wet solar cells. [30][31][32][33][34][35][36] Scherb and Kolb 23 determined the amounts of electrochemically deposited Cu on n-GaAs(100) by photoreflectivity measurement.…”