Formation of Ultra Shallow p⁺/n Junction in Silicon Using a Combination of Low-Temperature Solid Phase Epitaxy and Non-Melt Double-Pulsed Green Laser Annealing

Abstract

MOSFETs scaling-down is an effective way to attain high-performance CMOS operating with lower power and leakage current. However, short channel effects have become a serious problem due to the shortening of channel length. One of the promising methods to suppress this problem is by forming a shallow, highly doped and activated source/drain extension region. Fabricating ultra shallow p+/n junction is difficult due to the channeling of boron ions and anomalous boron diffusion during fabrication processes. A combination of Ge pre-amorphization implantation, low-energy boron implantation and two-step annealing, involving low-temperature solid phase epitaxy preannealing followed by non-melt laser annealing was used for forming ultra shallow p+/n junction in silicon. The physical relationship among the regrowth of implanted layer, boron activation and diffusion, and leakage current is investigated. We have succeeded in forming ultra shallow p+/n junction with junction depth of 8 nm and sheet resistance of 920 Ω/□.

Dynamical behavior and phase locking in a passively Q-switched Nd:YVO4 laser with pump modulation

“…In particular, the peak intensities can be nearly equal to double the pulse such as shown in figure 2(b). A double-pulse laser system can be applied in laser-induced breakdown spectroscopy (LIBS) [17][18][19] and annealing [20]. For example, in LIBS the double-pulse system is usually generated by dual pulse lasers with the delay generator based on two synchronized and carefully aligned laser sources.…”

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

“…15,16) From this, there is a possibility of improvement through process integration. For example, a future work is to perform additional lowtemperature annealing to maintain the amorphous state before LSA 42) and annealing in which F is separated without the diffusion of B after LSA. 43) Moreover, it is considered that the duration of LT implantation increases the amount of F adsorbed on the substrate surface.…”

Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

“…However, it is well known that ion implantation introduces a damage layer to the targeted semiconductor surface region. Appropriate annealing is required to regrow the damaged layer and to activate implanted dopants .…”