Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Hu, Quanli; Park, Mi Ra; Abbas, Haider; Kang, Tae Su; Yoon, Tae‐Sik; Kang, Chi Jung

doi:10.1016/j.mee.2018.01.005

Cited by 24 publications

(15 citation statements)

References 29 publications

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“…The resistive switching (RS) phenomenon is considered to be the reason behind this change of resistance values in a RRAM cell. An as-prepared RRAM is initially in the high resistance state (HRS), to switch the device from the HRS to the LRS, the application of the high voltage pulse enables the formation of conductive paths in the switching layer and the RRAM cell is switched into a LRS [72]. This process which occurs due to the soft breakdown of the metal insulator metal (MIM) structure is usually referred to as 'electroforming' and the voltage at which this process occurs is referred to as forming voltage (V f ).…”

Section: Resistance Switching Modesmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

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Section: Resistance Switching Modesmentioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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“…During the final scan (from 6 V to 0 V, the black curve in Figure 5 a), the device returns to its original state, which was assigned as “Rewrite” [ 41 ]. The two-stage current changes (e.g., sudden spike and drop) are typically referred to as “SET” and “RESET”, respectively [ 42 , 43 ]. Thus, the ITO/PF-BBO/Al device demonstrated rewritable electrical characteristics, which could also be interpreted as the flash-type ternary nonvolatile storage behavior.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Ternary Memristor Based on Fluorene-Benzimidazole Copolymer/Au NP Composites

Gao

et al. 2022

Nanomaterials

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A donor–acceptor type polymer of poly [2,7-(9,9-dioctyl)-fluorene-alt-7H-benzimidazo-[2,1-a]benzo[de]isoquinolin-7-one] (PF-BBO) based on benzimidazole groups was synthesized. This material was incorporated into data storage devices that exhibited good data storage characteristics. In order to improve the storage properties of the device, Au NPs were compounded in this material. We observed an increase in the ratio of switching current for the device with the PF-BBO/Au NP composite as the active layer. The device comprising 8 wt% Au NPs demonstrated optimal storage performance with a switching current ratio of 1:3.4 × 102:1.0 × 105 and a threshold voltage of −0.40 V/−0.85 V, respectively. The number of cycle times of this device was over 3000, which indicates excellent stability. Thus, the devices containing PF-BBO/Au NP composite as active materials offer a new dimension for future application prospects of high-density data storage.

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“…Metal oxides are typical inorganic interlayers, and a vast amount of electrode interlayer combinations was probed. Bipolar ReRAM devices were achieved, for instance, based on Pd/HfO x -Ag NPs/TiN [125], or Ag/MnO-Ta 2 O 5 /Pt [126].…”

Section: Electronic Flexible Devices Based On Other Oxidesmentioning

confidence: 99%

NiO-Based Electronic Flexible Devices

Carbone

2022

Applied Sciences

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Personal, portable, and wearable electronics have become items of extensive use in daily life. Their fabrication requires flexible electronic components with high storage capability or with continuous power supplies (such as solar cells). In addition, formerly rigid tools such as electrochromic windows find new utilizations if they are fabricated with flexible characteristics. Flexibility and performances are determined by the material composition and fabrication procedures. In this regard, low-cost, easy-to-handle materials and processes are an asset in the overall production processes and items fruition. In the present mini-review, the most recent approaches are described in the production of flexible electronic devices based on NiO as low-cost material enhancing the overall performances. In particular, flexible NiO-based all-solid-state supercapacitors, electrodes electrochromic devices, temperature devices, and ReRAM are discussed, thus showing the potential of NiO as material for future developments in opto-electronic devices.

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Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Cited by 24 publications

References 29 publications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Nonvolatile Ternary Memristor Based on Fluorene-Benzimidazole Copolymer/Au NP Composites

NiO-Based Electronic Flexible Devices

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