Forward current-voltage characteristics of Schottky barriers on n-type silicon

Saxena, Atul

doi:10.1016/0039-6028(69)90245-3

Cited by 162 publications

(50 citation statements)

References 9 publications

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“…In this case, E 0 is independent of the temperature and E 0 is very close to the E 00 values. 26 In our study, the average value of E 0 was found to be 88.5 meV, which is very close to the 85.7 meV value of E 00 that was obtained from the fitting of Eq. ͑8͒ to the n͑T͒ data ͑Fig.…”

Section: ͑7͒supporting

confidence: 87%

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Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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Section: ͑7͒supporting

confidence: 87%

“…Similar results have been reported in the literature. [11][12][13][14][26][27][28][29] The temperature dependences of I t and E 0 are shown in By using the model equation ͑11͒ and determined I t and E 0 from the measured I-V characteristic as well as knowing V K ͑0͒, which is the expression for the DD that can be given as [12][13][14] …”

Section: ͑7͒mentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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“…A typical J -V characteristic of evaporated Ni-Si, SBs, with Si resistivity of [10][11][12][13][14][15][16][17][18][19][20] cm is also shown in Fig. 1 for comparison.…”

Section: Resultsmentioning

confidence: 99%

“…3. The measurements are fit using a temperature-independent SB height thermionic emission model, the T 0 effect model [12] and the model of Werner and Guttler [13]. where the SB height φ Bn has a temperature dependent distribution:…”

Section: Resultsmentioning

confidence: 99%

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Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2006

Solid State Communications

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Ni-Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I -V , C-V and low temperature I -V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522-1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni-Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.

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