Four-point probe electrical measurements on p-n-p InP structures

Abstract

The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 o C. The zinc carrier concentration in the diffused layer was approximately 3 x 10 18 cm −3 and its mobility was assumed to be about 40 cm 2 V −1 s −1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.

Current-Voltage Measurements on Indium Phosphide Schottky Diodes

“…The properties of indium phosphide (InP) are typical of the majority of the semiconducting III-V compounds and particularly close in some aspects to those of GaAs [1]. Both materials have direct band gaps differing by about 0.1 eV and exhibit similar values for the electron and hole masses, e h m and m * * .…”