Four-States Multiferroic Memory Embodied Using Mn-Doped BaTiO₃ Nanorods

Abstract

Multiferroics that show simultaneous ferroic responses have received a great deal of attention by virtue of their potential for enabling new device paradigms. Here, we demonstrate a high-density four-states multiferroic memory using vertically aligned Mn-doped BaTiO3 nanorods prepared by applying the dip-pen nanolithography technique. In the present nanorods array, the polarization (P) switching by an external electric field does not influence the magnetization (M) of the nanorod owing to a negligible degree of the P-M cross-coupling. Similarly, the magnetic-field-induced M switching is unaffected by the ferroelectric polarization. On the basis of these, we are able to implement a four-states nonvolatile multiferroic memory, namely, (+P,+M), (+P,-M) ,(-P,+M), and (-P,-M) with the reliability in the P and M switching. Thus, the present work makes an important step toward the practical realization of multistate ferroic memories.

Absence of ferromagnetism in ferroelectric Mn‐doped BaTiO3 nanofibers

“…Barium titanate is one of the best‐known materials that show ferroelectric behavior at room temperature and is known to undergo a cubic‐to‐tetragonal structural phase transition at the Curie temperature T C = 120°C. Furthermore, modification of pure BaTiO 3 by defects in the crystal structure, by doping with other elements or creating vacancy sites, that is, oxygen vacancies, opens the possibility of having multifunctional materials …”

Metamagnetism stabilized giant magnetoelectric coupling in ferroelectric xBaTiO3–(1 − x)BiCoO3 solid solution

“…spin, orbital and electron order. The coupling between lattice and these order parameters could bring out novel physical phenomena, in which lattice is coupled with ferroelectric, ferromagnetic, and orbital degrees of free-dom resulting colossal magnetoresistance [26], high T C superconductivity [27], multiferroism [28] etc. The flexibility in the crystal structure of bismuth−based perovskites provides an opportunity to explore unusual physical properties by chemical modification at A and/or B−sites.…”

Wafer‐Scale Single‐Crystalline Ferroelectric Perovskite Nanorod Arrays

“…Ferroelectric nanostructures have attracted enormous interest in microelectronics for various applications including sensors, energy harvesters, and nonvolatile memories due to the inherent coupling between electromechanical parameters and confined polarization switching behavior along the growth direction. Typically, ferroelectric nanostructures have been synthesized by chemical methods in the powder form, free‐standing membranes and composites, and vertically aligned nanostructures on rigid substrates . More recently, laterally aligned molecular ferroelectric thin films have been demonstrated as a promising nanostructure .…”