Four-wave mixing in GaAs/AlAs triple-coupled cavity with InAs quantum dots

Abstract

We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure for an ultrafast wavelength conversion device. We found that significant improvement in the wavelength conversion was realized by introducing good nonlinear materials in the cavity layer, and that the precise control of the cavity modes was important to obtain stronger frequency conversion signals. We grew a triple coupled multilayer cavity structure with self-assembled InAs quantum dots (QDs) by molecular beam epitaxy and investigated the frequency separations of the cavity modes in relation to the cavity layer thickness using on the basis of the reflection spectra. Clear four-wave mixing (FWM) signals were demonstrated by time-resolved FWM measurements were performed at room temperature using a femtosecond laser system.

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

“…26) Using improved techniques, we have investigated the FWM in a GaAs=AlAs triple-coupled cavity with 3.4 ML InAs QDs, which were embedded in a strain-relaxed In 0.35 Ga 0.65 As layer to extend the resonance wavelength above 1.5 µm. 27) An equivalent effective optical thickness of three cavity layers was realized using a controlled lateral thickness variation across the wafer. Degenerate FWM signals with ω 1 and ω 2 were clearly observed when incident pulses covered both ω 1 and ω 2 frequencies.…”