We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure for an ultrafast wavelength conversion device. We found that significant improvement in the wavelength conversion was realized by introducing good nonlinear materials in the cavity layer, and that the precise control of the cavity modes was important to obtain stronger frequency conversion signals. We grew a triple coupled multilayer cavity structure with self-assembled InAs quantum dots (QDs) by molecular beam epitaxy and investigated the frequency separations of the cavity modes in relation to the cavity layer thickness using on the basis of the reflection spectra. Clear four-wave mixing (FWM) signals were demonstrated by time-resolved FWM measurements were performed at room temperature using a femtosecond laser system.

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Novel ultrafast wavelength conversion devices based on a GaAs/AlAs triple-coupled multilayer cavity are proposed. A clear wavelength-converted signal was demonstrated by four-wave mixing using three cavity modes realized in the triple-coupled cavity. We found that precise control of the cavity modes is important to obtain stronger frequency conversion signals. Significant improvements in the wavelength conversion are also expected by introducing good nonlinear materials in the half-wavelength (/2) cavity.