Fourier transform infrared spectroscopy characterization of AlN thin films grown on sacrificial silicon oxide layers via metal organic vapor phase epitaxy

Kuchibhatla, Sridhar; Rodak, L. E.; Korakakis, D.

doi:10.1016/j.tsf.2010.07.076

Cited by 15 publications

(7 citation statements)

References 44 publications

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“…43 Both of the N 2 :H 2 flow ratio annealing series exhibited similar FTIR spectra. In the low energy end of the spectra, the typical IR phonon modes of AlN are present and in good agreement with the previous research: [44][45][46][47] The valleys at 669 and 615 cm À1 can be assigned to the E1(TO) and A1(TO) modes, respectively. Moreover, the broad valley at 885 cm À1 can be associated with the A1(LO) mode.…”

supporting

confidence: 91%

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Broas

Sippola

Sajavaara

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films Broas, Mikael; Sippola, Perttu; Sajavaara, Timo; Vuorinen, Vesa; Perros, Alexander Pyymaki; Lipsanen, Harri; Paulasto-Kröckel, Mervi Broas, M., Sippola, P., Sajavaara, T., Vuorinen, V., Perros, A. P., Lipsanen, H., & Paulasto-Kröckel, M. (2016). Structural and chemical analysis of annealed plasmaenhanced atomic layer deposition aluminum nitride films.

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supporting

confidence: 91%

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Broas

Sippola

Sajavaara

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…At 50°C, only the A 1 (TO) mode appears, exhibiting the growth of crystallites other than c-axis oriented grains. In the 100 to 300°C substrate temperature range, the E 1 (TO) mode is dominant in the FTIR spectra, which demonstrates that the films mostly contain (002) or c-axis oriented crystallites [16], which is in agreement with the XRD results. In fact, the observations of FTIR spectra confirms 200°C substrate temperature as a relatively more suitable growth temperature for stress-free c-axis oriented Cr 2 N films by DC magnetron sputtering.…”

Section: Fig 3 Ftir Spectra Of the Films At Various Growth Conditiosupporting

confidence: 85%

Structural and optical analysis of Cr2N thin films prepared by DC magnetron sputtering

Khan

Mahmood²,

Shah³

et al. 2015

Int J Miner Metall Mater

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Chromium nitride (Cr 2 N) thin films were prepared by a DC magnetron sputtering technique. The deposition temperature was raised from 50 to 300°C, and its influence on the film structure and refractive index was investigated. X-ray diffraction analysis shows that the crystalline structure of the films transforms from the (101) to (002) oriented hexagonal Cr 2 N phase as the increase of substrate temperature above 50°C, and a highly textured film grows at 100°C. An empirical relation between the crystalline orientation and infrared active modes of the films is obtained, i.e., the Fourier transform infrared (FTIR) spectrum of the film prepared at 50°C exhibits only A 1 (TO) mode. The prominent peak in the FTIR spectra of the film prepared above 50°C is assigned to the E 1 (TO) mode and is correlated with the (002) or c-axis oriented hexagonal wurtzite phase of Cr 2 N. In the surface analysis of atomic force microscopy, a transformation from the featureless surface to columnar-type morphology is observed with the increase of substrate temperature from 50 to 100°C, exhibiting c-axis oriented crystallite growth. A further increase in substrate temperature to 200°C causes the c-axis crystallites to merge, resulting in the formation of voids. The refractive index (n) of the deposited films is obtained using spectroscopic ellipsometry.

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“…However, it is hard to distinguish those from the Si and SiO 2 modes. 72,73 The band around 15 µm (∼667 cm −1 ) observed for all sam-ples could be assigned to the transverse optical (TO) phonon mode of Al-N. In addition, in the data obtained for PEALD with NH 3 plasma two new resonances are clearly seen around 3.2 (∼3125 cm −1 ) and 4.7 µm (∼2128 cm −1 ).…”

Section: Fig 3 Ftir Experimental and Fitted Reflection For Sputtered Aln Films With Various Thicknessesmentioning

confidence: 73%

Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

Beliaev

Shkondin

Lavrinenko

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

Fourier transform infrared spectroscopy characterization of AlN thin films grown on sacrificial silicon oxide layers via metal organic vapor phase epitaxy

Cited by 15 publications

References 44 publications

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Structural and optical analysis of Cr2N thin films prepared by DC magnetron sputtering

Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths

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