Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures

Abstract

Articles you may be interested inDetermination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections J. Appl. Phys. 109, 104508 (2011)

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

“…where A = q 3 m e 8nhm˚B (14) and B = 4(2m) 1/2˚3/2 B 3qh/2n (15) where m e is the free electron mass, m is the effective electron mass in the oxide, and h is Planck's constant. A total of five samples was fitted with FN tunneling model for each of the investigated samples.…”

“…Further scaling of SiO 2 will result in exceptionally high direct tunneling current and increase reliability issue [3][4][5]. Thus, numerous investigations have been performed to substitute the SiO 2 with high dielectric constant (k) materials, such as HfO 2 [6][7][8], Al 2 O 3 [9], ZrO 2 [10,11], CeO 2 [12], Er 2 O 3 [13,14], and Y 2 O 3 [4,. Of these high-k oxides, Y 2 O 3 is considered as one of the potential candidates for substituting SiO 2 due to its fascinating properties, such as large band gap (∼5.5 eV), large conduction band offset (∼2.3 eV), high-k value (k = 15-18), low lattice mismatch and good thermal stability with silicon [4,[15][16][17][18][19].…”

“…eV)[14] on n-type Si substrate. The acquisition of the highest ˚B by O 2 annealed sample among all of the investigated samples had suppressed the leakage current through the oxide and enhanced the V B because it was more difficult for the carriers to overcome the barrier.Based on the above extracted parameters from the C-V and J-V analyses, it was determined that annealing in O 2 ambient had resulted in the best MOS characteristics.…”

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

“…The FE characteristics were analyzed by the Fowler-Nordheim theory [24][25][26], using the following equation,…”

Influence of an External Magnetic Field on Injected Charges of a Cr₂O₃/Fe/CeO₂/Si MIS Capacitor

“…The direct tunneling (DT) (Eq.1) and Schottky emission (SE) conduction equation (Eq.2) are as follows. [8][9][10] According to the Matthiessen's low [11], the experimental I-V curves were fitted by the linear combination of each conduction model regarding m ox as a fitting parameter. The m ox does not appear to be affected by the external magnetic field.…”