Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Abstract

We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m–0.52m, where m is the free electron mass.

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes

“…Hi-Lo C-V 측정은 포획된 전송자들의 포획 레벨에 따른 반응 시간을 이 용하는데, 포획된 전자들의 반응 시간은 다음과 같이 나타난다. [16] . 먼저 F-N터널링에 의한 누설 전류의 식은 다음과 같다.…”

BOEMDET-Band Offsets and Effective Mass Determination Technique utilizing Fowler-Nordheim tunneling slope constants in MIS devices on silicon

“…FN electron and hole tunneling has been observed in Si and SiC MOS devices and in organic light emitting diodes [3,5,13]. The FN equation models the current-voltage characteristics across a MOS device at high fields.…”

“…The FN equation models the current-voltage characteristics across a MOS device at high fields. It is given by the classical equation [4,5]:…”

“…The reviews describe research on various material issues pertaining to dielectric material for CMOS applications. The conduction through these dielectrics at high fields greater than 8MV/cm is described by the Fowler-Nordheim (FN) tunneling mechanism [3][4][5][6][7]. They contain traps in the bulk that causes Poole-Frenkel conduction at intermediate oxide fields of 5-7 MV/cm [8,9].…”

Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures

“…1. [8][9][10][11] For the film thickness below 4 nm, direct tunneling, as shown in Fig. 1͑b͒, dominates the leakage mechanism.…”