Fractal Aggregation Behavior in Amorphous Silicon Nitride Films

Abstract

A &actid aggregation behavior in amorphous silicon nitride (Si,N,) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. Theforming of &actid structure is related to the change of discharge mode between ring plasma and bulk plasma.

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

“…The optical gap of amorphous -α α fluorinated carbon films is relatively low ranging from 1.1 eV to 3.98 eV. [40][41][42][43] These values are much smaller than the direct gap of pure tetrahedrically bonded carbon (6.9-7.25 eV). 44 The E og of amorphous fluorinated carbon is closely related to size volume distribution of graphitic carbon clusters in an optically transparent matrix of amorphous material.…”

“…39 It has been reported that the π-bonds, showing sp 2 coordination in graphitic carbon clusters of sixfold rings, lower the optical energy gap in amorphous carbon films including hydrogenated or fluorinated carbon films. [40][41][42][43][44][45][46] SiCF films show the aromatic carbon double bonds at 1500-1600 cm Ϫ1 in Fig. 3.…”