Fracture limit in thin-film piezoelectric-on-substrate resonators: Silicon VS. diamond

Fatemi, Hedy; Abdolvand, Reza

doi:10.1109/memsys.2013.6474278

Cited by 6 publications

(2 citation statements)

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“…So to find the amplitude of vibration for each input power, the S parameters of the resonators are collected for each case. Then, energy stored in resonator in each case is calculated using the method proposed in [ 46 ]. In this approach, the magnitude and phase of the input and output current and voltage of the resonator are calculated using a model developed in the advanced design system (ADS) software and the S-parameters of the device.…”

Section: Measurements and Resultsmentioning

confidence: 99%

“…In this approach, the magnitude and phase of the input and output current and voltage of the resonator are calculated using a model developed in the advanced design system (ADS) software and the S-parameters of the device. The energy stored in resonator is then obtained using those calculated parameters [ 46 ]. This energy can be approximated by

in which x is the amplitude of vibration and k 0 is the linear spring stiffness constant of the resonator, which for lateral-extensional mode-shape can be calculated by [ 44 ]

in which E is the effective Young’s modulus, and A and L are the cross section area and length of the resonator, respectively.…”

Section: Measurements and Resultsmentioning

confidence: 99%

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Acceleration Sensitivity in Bulk-Extensional Mode, Silicon-Based MEMS Oscillators

2018

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Acceleration sensitivity in silicon bulk-extensional mode oscillators is studied in this work, and a correlation between the resonator alignment to different crystalline planes of silicon and the observed acceleration sensitivity is established. It is shown that the oscillator sensitivity to the applied vibration is significantly lower when the silicon-based lateral-extensional mode resonator is aligned to the <110> plane compared to when the same resonator is aligned to <100>. A finite element model is developed that is capable of predicting the resonance frequency variation when a distributed load (i.e., acceleration) is applied to the resonator. Using this model, the orientation-dependent nature of acceleration sensitivity is confirmed, and the effect of material nonlinearity on the acceleration sensitivity is also verified. A thin-film piezoelectric-on-substrate platform is chosen for the implementation of resonators. Approximately, one order of magnitude higher acceleration sensitivity is measured for oscillators built with a resonator aligned to the <100> plane versus those with a resonator aligned to the <110> plane (an average of ~5.66 × 10−8 (1/g) vs. ~3.66 × 10−9 (1/g), respectively, for resonators on a degenerately n-type doped silicon layer).

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Section: Measurements and Resultsmentioning

confidence: 99%

in which x is the amplitude of vibration and k 0 is the linear spring stiffness constant of the resonator, which for lateral-extensional mode-shape can be calculated by [ 44 ]

in which E is the effective Young’s modulus, and A and L are the cross section area and length of the resonator, respectively.…”

Section: Measurements and Resultsmentioning

confidence: 99%