Fracture strength and biaxial modulus measurement of plasma silicon nitride films

Cardinale, Gregory Frank; Tustison, Randal W.

doi:10.1016/0040-6090(92)90112-o

Cited by 48 publications

(29 citation statements)

References 12 publications

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“…Plasma enhanced chemical vapour deposition (PECVD) fabrication gives a strength of 390 MPa for silicon-rich composition and 420 MPa for nitrogen-rich composition [28,45]. Low pressure CVD (LPCVD) fabrication reportedly allows strengths as high as 5-8 GPa [28,29].…”

Section: Fabrication Of a Resonator With Nanoscale Silicon Nitridmentioning

confidence: 99%

Towards thermal noise free optomechanics

Page¹,

Zhao²,

Blair³

et al. 2016

J. Phys. D: Appl. Phys.

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Thermal noise generally greatly exceeds quantum noise in optomechanical devices unless the mechanical frequency is very high or the thermodynamic temperature is very low. This paper addresses the design concept for a novel optomechanical device capable of ultrahigh quality factors in the audio frequency band with negligible thermal noise. The proposed system consists of a minimally supported millimeter scale pendulum mounted in a Double End-Mirror Sloshing (DEMS) cavity that is topologically equivalent to a Membrane-in-the-Middle (MIM) cavity. The radiation pressure inside the high-finesse cavity allows for high optical stiffness, cancellation of terms which lead to unwanted negative damping and suppression of quantum radiation pressure noise. We solve for the optical spring dynamics of the system using the Hamiltonian, find the noise spectral density and show that stable optical trapping is possible. We also assess various loss mechanisms, one of the most important being the acceleration loss due to the optical spring. We show that practical devices, starting from a centre-of-mass pendulum frequency of 0.1 Hz, could achieve a maximum quality factor of 10 14 with optical spring stiffened frequency 1-10 kHz. Small resonators of mass 1 µg or less could achieve a Q-factor of 10 11 at a frequency of 100 kHz. Applications for such devices include white light cavities for improvement of gravitational wave detectors, or sensors able to operate near the quantum limit.

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Section: Fabrication Of a Resonator With Nanoscale Silicon Nitridmentioning

confidence: 99%

Towards thermal noise free optomechanics

Page¹,

Zhao²,

Blair³

et al. 2016

J. Phys. D: Appl. Phys.

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“…Having obtained the necessary output power at 372 nm, we need a way to lock the laser wavelength to the wavelength of the 5 D 4 3 5 F 5 atomic transition. To do this, it is necessary to perform polarization spectroscopy on this transition (21). We need atomic Fe to observe this transition.…”

Section: Figmentioning

confidence: 99%

“…We applied polarization spectroscopy to this discharge. In polarization spectroscopy, Doppler broadening of the absorption profile is compensated for (21). This method theoretically enables us to obtain an error signal with a peak to peak width determined by the natural linewidth of the transition, ⌫͞2 ϭ 2.58 MHz for our target transition.…”

Section: Figmentioning

confidence: 99%

Magnetic nanodots from atomic Fe: Can it be done?

Sligte

Bosch

Smeets

et al. 2002

Proc. Natl. Acad. Sci. U.S.A.

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Laser focusing of Fe atoms offers the possibility of creating separate magnetic structures on a scale of 10 nm with exact periodicity. This can be done by using the parabolic minima of the potential generated by a standing light wave as focusing lenses. To achieve the desired 10-nm resolution, we need to suppress chromatic and spherical aberrations, as well as prevent structure broadening caused by the divergence of the incoming beam. Chromatic aberrations are suppressed by the development of a supersonic Fe beam source with speed ratio S ‫؍‬ 11 ؎ 1. This beam has an intensity of 3 ؋ 10 15 atoms sr ؊1 s ؊1 . The spherical aberrations of the standing light wave will be suppressed by aperturing with beam masks containing 100-nm slits at 744-nm intervals. The beam divergence can be reduced by application of laser cooling to reduce the transverse velocity. We have constructed a laser system capable of delivering over 500 mW of laser light at 372 nm, the wavelength of the 5 D4 3 5 F5 atomic transition of 56 Fe we intend to use for laser cooling. Application of polarization spectroscopy to a hollow cathode discharge results in a locking system holding the laser continuously within 2 MHz of the desired frequency.

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“…However, the fracture toughness of thin films can be very different from the ones measured from bulk materials due to the difference in microstructure and composition. In the available reports on thin film fracture toughness and fracture strength studies on silicon nitride, micro-bridge [17] or micro-bulge specimens [18] had to be fabricated by a lithographic approach, which is both expensive in sample making and inaccurate in result interpretation. For example, in the micro-bridge test, the residual stress in the films had to be estimated in order to calculate the fracture toughness of the thin film [19].…”

Section: Introductionmentioning

confidence: 99%

“…Due to the uncertainty on the residual stresses, the reported value for the critical stress intensity factor ranges from 1.8 ± 0.3 MPa·m 1 /2 for low-stress film to an upper bound value of 14 MPa·m 1 /2 for a high-stress film [17]. The micro-bulge test [18], however, can only yield information on the biaxial modulus and tensile fracture strength, not the fracture toughness of the film. No report is available for the fracture toughness and fracture strength of silicon oxynitride thin films.…”

Section: Introductionmentioning

confidence: 99%

Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

2018

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Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si 3 N 4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young's modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young's modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiN x films were composed of a crystalline Si 3 N 4 phase, while the SiO x N y films were dominated by amorphous Si-O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

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Fracture strength and biaxial modulus measurement of plasma silicon nitride films

Cited by 48 publications

References 12 publications

Towards thermal noise free optomechanics

Towards thermal noise free optomechanics

Magnetic nanodots from atomic Fe: Can it be done?

Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

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