Fracture strength, elastic modulus and Poisson's ratio of polycrystalline 3C thin-film silicon carbide found by microsample tensile testing

Jackson, Kamili M.

doi:10.1016/j.sna.2004.10.008

Cited by 28 publications

(21 citation statements)

References 18 publications

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“…Two observations about these two studies are worth noting. First, the thinner specimens [13] tend to be stronger than the thicker ones [14]. Second, the coefficient of variation (standard deviation divided by mean) is quite large, reaching almost 50% in one case.…”

Section: Introductionmentioning

confidence: 97%

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Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

Sharpe

Beheim

Evans

et al. 2008

J. Microelectromech. Syst.

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Three shapes of silicon carbide tensile specimens were tested-curved with a low stress-concentration factor and straight with a circular hole or an elliptical hole. The nominal thickness was 125 µm with a net section that is 100-µm wide; the overall length of these microspecimens was 3.1 mm. They were fabricated by an improved version of deep reactive ion etching, which produced specimens with smooth sidewalls and cross sections having a slightly trapezoidal shape that was exaggerated inside the holes. The novel test setup used a vertical load train extending into a resistance furnace. The specimens had wedge-shaped ends which fit into ceramic grips. The fixed grip was mounted on a ceramic post, and the movable grip was connected to a load cell and actuator outside the furnace with a ceramic-encased nichrome wire. The same arrangement was used for tests at 24 • C and at 1000 • C. The strengths of the curved specimens for two batches of material (made with slightly different processes) were 0.66 ± 0.12 and 0.45 ± 0.20 GPa, respectively, at 24 • C with identical values at 1000 • C. The fracture strengths of the circular-hole and elliptical-hole specimens (computed from the stress-concentration factors and measured loads at failure) were approximately 1.2 GPa with slight decreases at the higher temperature. Fractographic examinations showed failures initiating on the surface-primarily at corners. Weibull predictions of fracture strengths for the hole specimens based on the properties of the curved specimens were reasonably effective for the circular holes but not for the elliptical holes.[2007-0057]

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Section: Introductionmentioning

confidence: 97%

“…The average fracture strengths were 1.19 ± 0.53 and 1.65 ± 0.39 GPa, respectively. Specimens of the same planar shape, but thicker at 20-40 µm, were fabricated by micromolding at MIT in two batches [14]. The fracture strengths were 0.49 ± 0.20 and 0.81 ± 0.23 GPa.…”

Section: Introductionmentioning

confidence: 99%

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

Sharpe

Beheim

Evans

et al. 2008

J. Microelectromech. Syst.

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“…Fracture properties of microscale SiC thin film have been determined by beam-bending testing [2], microbridge testing [3], microtensile testing [4]- [6], and bulge testing [7], [8]. Kahn et al [2] used a beam-bending test to extract the fracture strength (9.0 ± 1.0 GPa) of 0.2-µm-thick 3C-SiC.…”

mentioning

confidence: 99%

“…Microtensile testing has been widely used to characterize the mechanical and fracture properties of microscale thin films [4]- [6], [9], [10]. The analytical model for the uniaxially stressed tensile specimen is straightforward, whereas the specimen preparation and handling are delicate.…”

mentioning

confidence: 99%

Fracture Properties of Silicon Carbide Thin Films by Bulge Test of Long Rectangular Membrane

Zhou¹,

Yang²,

Sun

et al. 2008

J. Microelectromech. Syst.

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This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 µm were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 ± 47 and 201 ± 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 ± 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 ± 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 ± 0.88 and 3.16 ± 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-µm-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-µm-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.[ 2007-0191]Index Terms-Bulge test, fracture property, microelectromechanical systems (MEMS), silicon carbide (SiC) thin films, Weibull distribution function.

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“…, and v s ¼0.17 for SiC [12]. Transmission electron microscopy (TEM) analysis was conducted with a Philips CM200 microscope operated with a beam energy of 200 keV, equipped with a Veleta camera and a Gatan imaging filter (GIF) camera for high resolution TEM (HRTEM).…”

Section: Methodsmentioning

confidence: 99%

Mapping the local modulus of Sylramic silicon carbide fibers by nanoindentation

Solá

Bhatt

2015

Materials Letters

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Fracture strength, elastic modulus and Poisson's ratio of polycrystalline 3C thin-film silicon carbide found by microsample tensile testing

Cited by 28 publications

References 18 publications

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 $^{\circ}\hbox{C}$ and 1000 $^{\circ}\hbox{C}$

Fracture Properties of Silicon Carbide Thin Films by Bulge Test of Long Rectangular Membrane

Mapping the local modulus of Sylramic silicon carbide fibers by nanoindentation

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